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Ferrari, S.; Kovalyuk, V.; Hartmann, W.; Vetter, A.; Kahl, O.; Lee, C.; Korneev, A.; Rockstuhl, C.; Gol'tsman, G.; Pernice, W. |
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Hot-spot relaxation time current dependence in niobium nitride waveguide-integrated superconducting nanowire single-photon detectors |
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Journal Article |
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2017 |
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Opt. Express |
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Opt. Express |
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25 |
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8 |
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8739-8750 |
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SSPD, SNSPD, photon counting; Infrared; Quantum detectors; Integrated optics; Multiphoton processes; Photon statistics |
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We investigate how the bias current affects the hot-spot relaxation dynamics in niobium nitride. We use for this purpose a near-infrared pump-probe technique on a waveguide-integrated superconducting nanowire single-photon detector driven in the two-photon regime. We observe a strong increase in the picosecond relaxation time for higher bias currents. A minimum relaxation time of (22 +/- 1)ps is obtained when applying a bias current of 50% of the switching current at 1.7 K bath temperature. We also propose a practical approach to accurately estimate the photon detection regimes based on the reconstruction of the measured detector tomography at different bias currents and for different illumination conditions. |
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RPLAB @ kovalyuk @ |
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1118 |
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Gershenzon, E. M.; Goltsman, G.; Orlova, S.; Ptitsina, N.; Gurvich, Y. |
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Title |
Germanium hot-electron narrow-band detector |
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1971 |
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Sov. Radio Engineering And Electronic Physics |
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Sov. Radio Engineering And Electronic Physics |
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16 |
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8 |
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1346 |
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Ge HEB detectors |
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Scripps Clinic Res Foundation 476 Prospect St, La Jolla, Ca 92037 |
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Gol'tsman, G. N.; Semenov, A. D.; Gousev, Y. P.; Zorin, M. A.; Gogidze, I. G.; Gershenzon, E. M.; Lang, P. T.; Knott, W. J.; Renk, K. F. |
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Sensitive picosecond NbN detector for radiation from millimetre wavelengths to visible light |
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1991 |
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Supercond. Sci. Technol. |
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Supercond. Sci. Technol. |
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4 |
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9 |
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453-456 |
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NbN HEB detectors |
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The authors report on the application of a broad-band NbN film detector which has high sensitivity and picosecond response time for detection of radiation from millimetre wavelengths to visible light. From a study of amplitude modulated radiation of backward-wave tubes and picosecond pulses from gas and solid state lasers at wavelengths between 2 mm and 0.53 mu m, they found a detectivity of 1010 W-1 cm Hz-1/2 and a response time of less than 50 ps at T=10 K. The characteristics were provided by using a 150 AA thick NbN film patterned into a structure of micron strips. According to the proposed detection mechanism, namely electron heating, they expect an intrinsic response time of approximately 20 ps at the same temperature. |
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0953-2048 |
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Doi, Y.; Wang, Z.; Ueda, T.; Nickels, P.; Komiyama, S.; Patrashin, M.; Hosako, I.; Matsuura, S.; Shirahata, M.; Sawayama, Y.; Kawada, M. |
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CSIP – a novel photon-counting detector applicable for the SPICA far-infrared instrument |
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2009 |
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SPICA |
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SPICA |
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SPICA Workshop 2009 |
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detectors; Infrared |
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We describe a novel GaAs/AlGaAs double-quantumwell device for the infrared photon detection, called ChargeSensitive Infrared Phototransistor (CSIP). The principle of CSIP detector is the photo-excitation of an intersubband transition in a QW as an charge integrating gate and the signal ampli<ef><ac><81>cation by another QW as a channel with very high gain, which provides us with extremely high responsivity (104 – 106 A/W). It has been demonstrated that the CSIP designed for the mid-infrared wavelength (14.7 μm) has an excellent sensitivity; the noise equivalent power (NEP) of 7 × 10-19 W/ with the quantum effciency of ~ 2%. Advantages of the CSIP against the other highly sensitive detectors are, huge dynamic range of > 106, low output impedance of 103 – 104 Ohms, and relatively high operation temperature (> 2 K). We discuss possible applications of the CSIP to FIR photon detection covering 35 – 60 μm waveband, which is a gap uncovered with presently available photoconductors. |
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RPLAB @ gujma @ |
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672 |
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