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Verevkin AA, Ptitsina NG, Smirnov KV, Goltsman GN, Gershenson EM, Yngvesson KS. Direct measurements of electron energy relaxation times at an AlGaAs/GaAs heterointerface in the optical phonon scattering range. In: Proc. 4-th Int. Semicond. Device Research Symp.; 1997. p. 55–8.
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Gershenzon EM, Goltsman GN, Orlov L. Investigation of population and ionization of donor excited states in Ge. In: Physics of Semiconductors. North-Holland Publishing Co.; 1976. p. 631–4.
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Averkin AS, Shishkin AG, Chichkov VI, Voronov BM, Goltsman GN, Karpov A, et al. Tunable frequency-selective surface based on superconducting split-ring resonators. In: 8th Metamaterials.; 2014.
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Angeluts AA, Bezotosnyi VV, Cheshev EA, Goltsman GN, Finkel MI, Seliverstov SV, et al. Compact 1.64 THz source based on a dual-wavelength diode end-pumped Nd:YLF laser with a nearly semiconfocal cavity. Laser Phys. Lett.. 2014;11(1):015004 (1 to 4).
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Nikogosyan AS, Martirosyan RM, Hakhoumian AA, Makaryan AH, Tadevosyan VR, Goltsman GN, et al. Effect of absorption on the efficiency of terahertz radiation generation in the metal waveguide partially filled with nonlinear crystal LiNbO3, DAST or ZnTe. J Contemp Phys. 2019;54(1):97–104.
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