Author |
Title |
Year |
Publication |
Volume |
Pages |
Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I. |
Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures |
2010 |
Bull. Russ. Acad. Sci. Phys. |
74 |
100-102 |
Krause, S.; Mityashkin, V.; Antipov, S.; Gol’tsman, G.; Meledin, D.; Desmaris, V.; Belitsky, V.; Rudziński, M. |
Reduction of phonon escape time for nbn hot electron bolometers by using gan buffer layers |
2017 |
IEEE Trans. Terahertz Sci. Technol. |
7 |
53-59 |
Kawamura, J.; Tong, C.-Y. E.; Blundell, R.; Papa, D. C.; Hunter, T. R.; Patt, F.; Gol’tsman, G.; Gershenzon, E. |
Terahertz-frequency waveguide NbN hot-electron bolometer mixer |
2001 |
IEEE Trans. Appl. Supercond. |
11 |
952-954 |
Hübers, H.-W.; Schubert, J.; Krabbe, A.; Birk, M.; Wagner, G.; Semenov, A.; Gol’tsman, G.; Voronov, B.; Gershenzon, E. |
Parylene anti-reflection coating of a quasi-optical hot-electron-bolometric mixer at terahertz frequencies |
2001 |
Infrared Physics & Technology |
42 |
41-47 |
Semenov, A. D.; Gol’tsman, G. N. |
Nonthermal mixing mechanism in a diffusion-cooled hot-electron detector |
2000 |
J. Appl. Phys. |
87 |
502-510 |