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| Author | Kawamura, Jonathan; Blundell, Raymond; Tong, C.-Y. Edward; Papa, D. Cosmo; Hunter, Todd R.; Gol'tsman, Gregory; Cherednichenko, Sergei; Voronov, Boris; Gershenzon, Eugene | ||||
| Title | First light with an 800 GHz phonon-cooled HEB mixer receiver | Type | Conference Article | ||
| Year | 1998 | Publication | Proc. 9th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 9th Int. Symp. Space Terahertz Technol. |
| Volume | Issue | Pages | 35-43 | ||
Keywords  |
HEB, mixer, LO power, local oscillator power, saturation effect, dynamic range | ||||
| Abstract | Phonon-cooled superconductive hot-electron bolometric (HEB) mixers are incorporated in a waveguide receiver designed to operate near 800 Gliz. The mixer elements are thin-film nio- bium nitride microbridges with dimensions of 4 nm thickness, 0.2 to 0.3 p.m in length and 2 jun in width. At 780 GHz the best receiver noise temperature is 840 K (DSB). The mixer IF bandwidth is 2.0 GHz, the absorbed LO power is —0.1 1.1W. A fixed-tuned version of the re- ceiver was installed at the Submillimeter Telescope Observatory on Mt. Graham, Arizona, to conduct astronomical observations. These observations represent the first time that a receiver incorporating any superconducting HEB mixer has been used to detect a spectral line of celes- tial origin. | ||||
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| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Pasadena, California, USA | Editor | ||
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 572 | |||
| Permanent link to this record | |||||
| Author | Tong, C.-Y.E.; Meledin, D.V.; Marrone, D.P.; Paine, S.N.; Gibson, H.; Blundell, R. | ||||
| Title | Near field vector beam measurements at 1 THz | Type | Journal Article | ||
| Year | 2003 | Publication | IEEE Microw. Compon. Lett. | Abbreviated Journal | |
| Volume | 13 | Issue | 6 | Pages | 235-237 |
| Keywords |
HEB, mixer, waveguide, LO power, local oscillator power, saturation effect, dynamic range | ||||
| Abstract | We have performed near-field vector beam measurements at 1.03 THz to characterize and align the receiver optics of a superconducting receiver. The signal source is a harmonic generator mounted on an X-Y translation stage. We model the measured two-dimensional complex beam pattern by a fundamental Gaussian mode, from which we derive the position of the beam center, the beam radius and the direction of propagation. By performing scans in the planes separated by 400 mm, we have confirmed that our beam pattern measurements are highly reliable. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1531-1309 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | RPLAB @ lobanovyury @ | Serial | 574 | ||
| Permanent link to this record | |||||
| Author | Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. | ||||
| Title | Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver | Type | Conference Article | ||
| Year | 2017 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 27 | Issue | 4 | Pages | 6 |
| Keywords |
Multi-pixel, HEB, silicon-on-insulator, horn array | ||||
| Abstract | We report on the development of a multi-pixel Hot Electron Bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 μm and 300 μm respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, |
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | RPLAB @ kovalyuk @ | Serial | 1111 | ||
| Permanent link to this record | |||||
| Author | Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. | ||||
| Title | Development of a silicon membrane-based multipixel hot electron bolometer receiver | Type | Journal Article | ||
| Year | 2017 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 27 | Issue | 4 | Pages | 1-5 |
| Keywords |
Multi-pixel, NbN HEB, silicon-on-insulator, horn array | ||||
| Abstract | We report on the development of a multipixel hot electron bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin-film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 and 300 μm, respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, fed by a monolithic drilled smooth-walled horn array. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1051-8223 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1324 | |||
| Permanent link to this record | |||||
| Author | Meledin, D.; Tong, C. Y.-E.; Blundell, R.; Kaurova, N.; Smirnov, K.; Voronov, B.; Gol'tsman, G. | ||||
| Title | Study of the IF bandwidth of NbN HEB mixers based on crystalline quartz substrate with an MgO buffer layer | Type | Journal Article | ||
| Year | 2003 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 13 | Issue | 2 | Pages | 164-167 |
| Keywords |
NbN HEB mixer | ||||
| Abstract | In this paper, we present the results of IF bandwidth measurements on 3-4 nm thick NbN hot electron bolometer waveguide mixers, which have been fabricated on a 200-nm thick MgO buffer layer deposited on a crystalline quartz substrate. The 3-dB IF bandwidth, measured at an LO frequency of 0.81 THz, is 3.7 GHz at the optimal bias point for low noise receiver operation. We have also made measurements of the IF dynamic impedance, which allow us to evaluate the intrinsic electron temperature relaxation time and self-heating parameters at different bias conditions. | ||||
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 341 | |||
| Permanent link to this record | |||||