Seleznev VA, Divochiy AV, Vakhtomin YB, Morozov PV, Zolotov PI, Vasil'ev DD, et al. Superconducting detector of IR single-photons based on thin WSi films. In: J. Phys.: Conf. Ser. Vol 737.; 2016. 012032.
Abstract: We have developed the deposition technology of WSi thin films 4 to 9 nm thick with high temperature values of superconducting transition (Tc~4 K). Based on deposed films there were produced nanostructures with indicative planar sizes ~100 nm, and the research revealed that even on nanoscale the films possess of high critical temperature values of the superconducting transition (Tc~3.3-3.7 K) which certifies high quality and homogeneity of the films created. The first experiments on creating superconducting single-photon detectors showed that the detectors' SDE (system detection efficiency) with increasing bias current (I b) reaches a constant value of ~30% (for X=1.55 micron) defined by infrared radiation absorption by the superconducting structure. To enhance radiation absorption by the superconductor there were created detectors with cavity structures which demonstrated a practically constant value of quantum efficiency >65% for bias currents Ib>0.6-Ic. The minimal dark counts level (DC) made 1 s-1 limited with background noise. Hence WSi is the most promising material for creating single-photon detectors with record SDE/DC ratio and noise equivalent power (NEP).
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Antipov AV, Seleznev VA, Vakhtomin YB, Morozov PV, Vasilev DD, Malevannaya EI, et al. Investigation of WSi and NbN superconducting single-photon detectors in mid-IR range. In: IOP Conf. Ser.: Mater. Sci. Eng. Vol 781.; 2020. 012011 (1 to 5).
Abstract: Spectral characteristics of WSi and NbN superconducting single-photon detectors with different surface resistance and width of nanowire strips have been investigated in the wavelength range of 1.3-2.5 μm. WSi structures with narrower strips demonstrated better performance for detection of single photons in longer wavelength range. The difference in normalized photon count rate for such structures reaches one order of magnitude higher in comparison with structures based on NbN thin films at 2.5 μm.
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