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Palermo C, Varani L, Vaissière J-C, Millithaler J-F, Starikov E, Shiktorov P, et al. Monte Carlo calculation of diffusion coefficient, noise spectral density and noise temperature in HgCdTe. In: Proc. AIP Conf. Vol 780.; 2005. p. 151–4.
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Gross R, Marx A. Applied superconductivity: Josephson effect and superconducting electronics. Chapter 7. In: Walther-Meißner-Institut.; 2005.
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Hoogeveen RWM, Yagoubov PA, de Lange A, Selig AM, Koshelets VP, Ellison B. N., et al. Superconducting integrated receiver development for TELIS. In: Proc. 12th International Symposium on Remote Sensing. Bruges, Belgium; 2005.
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Bryerton E, Percy R, Bass R, Schultz J, Oluleye O, Lichtenberger A, et al. Receiver measurements of pHEB beam lead mixers on 3-μm silicon. In: Proc. 30th IRMMW / 13th THz.; 2005. p. 271–2.
Abstract: We report on receiver noise measurement results of phonon-cooled HEB beam lead mixers on 3 μm thick silicon. This type of ultra-thin mixer chip with integrated beam leads allows easy assembly into a block and holds great promise for array integration. Receiver measurements from 600-720 GHz are presented with a minimum noise temperature of 500 K at 666 GHz. These results verify the mixer performance of the SOI processing techniques allowing for further design and integration of SOI pHEB mixers in receivers operating above 1 THz.
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Morozov DV, Smirnov KV, Smirnov AV, Lyakhov VA, Goltsman GN. A millimeter-submillimeter phonon-cooled hot-electron bolometer mixer based on two-dimensional electron gas in an AlGaAs/GaAs heterostructure. Semicond. 2005;39(9):1082–6.
Abstract: Experimental results obtained by studying the main characteristics of a millimeter-submillimeter wave mixer based on the hot-electron effect in a two-dimensional electron gas in a AlGaAs/GaAs heterostructure with a phonon-scattering cooling mechanism for charge carriers are reported. The gain bandwidth of the mixer is 4 GHz, the internal conversion losses are 13 dB, and the optimum local-oscillator power is 0.5 μW (for a mixer area of 1 μm2). It is shown that a millimeter-submillimeter-wave receiver with a noise temperature of 1900 K can be developed on the basis of a AlGaAs/GaAs mixer. This mixer also appears to be promising for use in array receiver elements.
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