|
Elantev AI, Karasik BS. Noise temperature of a superconducting hot-electron mixer. In: Proc. 5th Int. Symp. Space Terahertz Technol.; 1994. 225.
|
Gol’tsman GN. Terahertz technology in Russia. In: 24th European Microwave Conf. Vol 1.; 1994. p. 113–21.
Abstract: The presentation consider the parameters and operating peculiarities of unique microwave generators of the terahertz range which have been created in Russia – the backward wave oscillators – as well as certain devices based on these generators, such as high resolution. spectrometers and time-resolving spectrometers with picosecond temporal resolution. Most resent BWO-based studies are illustrated by a project devoted to superconductive hot-electron. bolometers which are of great independent value for the terahertz technology as high-sensitive picosecond detectors and low noise broad-band mixers.
|
|
Hong K, Marsh PF, Geok-Ing Ng, Pavlidis D, Hong C-H. Optimization of MOVPE grown InxAl1-xAs/In0.53Ga0.47As planar heteroepitaxial Schottky diodes for terahertz applications. IEEE Trans. Electron Devices. 1994;41(9):1489–97.
|
Matsushima F, Odashima H, Iwasaki T, Tsunekawa S, Takagi K. Frequency measurement of pure rotational transitions of H2O from 0.5 to 5 THz. In: Conference on precision electromagnetic measurements digest.; 1994. p. 23–4.
Abstract: Frequencies of H2O pure rotational transitions from 0.5 to 5 THz have been measured with an accuracy of one part in 109 using a tunable far-infrared spectrometer. Measured frequencies of more than a hundred spectral lines provide an excellent wavelength and frequency calibration standard for the far infrared.
|
Dzardanov A, Ekstrom H, Gershenzon E, Gol'tsman G, Jacobsson S, Karasik B, et al. Hot-electron superconducting mixers for 20-500 GHz operation. In: Proc. Int. Conf. on Millimeter and Submillimeter Waves and Appl. Vol 2250.; 1994. p. 276–8.
Abstract: Bolometdcmucers based on Nb and NbN superconducting thin films in the resistive state have been prepared for 20, 100 GHz and 350-500 GHz operation. The mixing mechanism is presumably of electron heating origin. Our measurements indicate that a conversion loss of about 6-8 dB can rather easily be achieved, and that the noise is reasonably low. The requirements on the operation mode and on the film parameters in order to obtain small conversion losses or even gain are discussed. For NbN films the availability of nearly 1 GHz IF bandwidth is experimentally demonstrated. NbN hot-electron mucers combined with slot-line tapered antenna on Si membrane or with double-dipole antenna on SiO^ substrate have been fabricated. The devices we study are considered to be very promising for use in heterodyne receivers from microwaves to terahertz frequencies.
|
