| Author |
Title |
Year |
Publication |
DOI |
| Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
Cross section for binding of free carriers into excitons in germanium |
1981 |
JETP Lett. |
|
| Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
Investigation of free excitons in Ge and their condensation at submillimeter wavelengths |
1976 |
Sov. Phys. JETP |
|
| Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I. |
Energy spectrum of the donors in GaAs and Ge and its reaction to a magnetic field |
1977 |
Sov. Phys. JETP |
|
| Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M. |
Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium |
1971 |
JETP Lett. |
|
| Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsyna, N. G. |
Capture of photoexcited carriers by shallow impurity centers in germanium |
1979 |
Sov. Phys. JETP |
|
