Baubert J, Salez M, Delorme Y, Pons P, Goltsman G, Merkel H, et al. Membrane-based HEB mixer for THz applications. In: Chiao J-C, Varadan VK, Cané C, editors. Proc. SPIE. Vol 5116. SPIE; 2003. p. 551–62.
Abstract: We report in this paper a new concept for 2.7 THz superconducting Niobium nitride (NbN) Hot-Electron Bolometer mixer (HEB). The membrane process was developped for space telecommnunication applications a few years ago and the HEB mixer concept is now considered as the best choice for low-noise submillimeter-wave frequency heterodyne receivers. The idea is then to join these two technologies. The novel fabrication scheme is to fabricate a NbN HEB mixer on a 1 μm thick stress-less Si3N4/SiO2 membrane. This seems to present numerous improvements concerning : use at higher RF frequencies, power coupling efficiency, HEB mixer sensitivity, noise temperature, and space applications. This work is to be continued within the framework of an ESA TRP project, a 2.7 THz heterodyne camera with numerous applications including a SOFIA airborne receiver. This paper presents the whole fabrication process, the validation tests and preliminary results. Membrane-based HEB mixer theory is currently being investigated and further tests such as heterodyne and Fourier transform spectrometry measurement are planed shortly.
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Baselmans JJA, Hajenius M, Gao J, de Korte P, Klapwijk TM, Voronov B, et al. Doubling of sensitivity and bandwidth in phonon-cooled hot-electron bolometer mixers. In: Zmuidzinas J, Holland WS, Withington S, editors. Proc. SPIE. Vol 5498. SPIE; 2004. p. 168–76.
Abstract: NbN hot electron bolometer (HEB) mixers are at this moment the best heterodyne detectors for frequencies above 1 THz. However, the fabrication procedure of these devices is such that the quality of the interface between the NbN superconducting film and the contact structure is not under good control. This results in a contact resistance between the NbN bolometer and the contact pad. We compare identical bolometers, with different NbN – contact pad interfaces, coupled with a spiral antenna. We find that cleaning the NbN interface and adding a thin additional superconductor prior to the gold contact deposition improves the noise temperature and the bandwidth of the HEB mixers with more than a factor of 2. We obtain a DSB noise temperature of 950 K at 2.5 THz and a Gain bandwidth of 5-6 GHz. For use in real receiver systems we design small volume (0.15x1 micron) HEB mixers with a twin slot antenna. We find that these mixers combine good sensitivity (900 K at 1.6 THz) with low LO power requirement, which is 160 – 240 nW at the Si lens of the mixer. This value is larger than expected from the isothermal technique and the known losses in the lens by a factor of 3-3.5.
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Zhou YD, Becker CR, Ashokan R, Selamet Y, Chang Y, Boreiko RT, et al. Progress in far-infrared detection technology. In: Proc. SPIE. Vol 4795.; 2002. p. 121–8. (Society of Photo-Optical Instrumentation Engineers (SPIE) Conference Series).
Abstract: II-VI intrinsic very long wavelength infrared (VLWIR, λc~20 to 50 μm) materials, HgCdTe alloys as well as HgCdTe/CdTe superlattices, were grown by molecular beam epitaxy (MBE). The layers were characterized by means of X-ray diffraction, conventional Fourier transform infrared spectroscopy, Hall effect measurements and transmittance electron microscopy (TEM). Photoconductor devices were processed and their spectral response was also measured to demonstrate their applicability in the VLWIR region.
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Cherednichenko S, Drakinskiy V, Baubert J, Lecomte B, Dauplay F, Krieg JM, et al. 2.5 THz multipixel heterodyne receiver based on NbN HEB mixers. In: Proc. SPIE. Vol 6275.; 2006. 62750I (1 to 11).
Abstract: A 16 pixel heterodyne receiver for 2.5 THz has been developed based on NbN superconducting hot-electron bolometer (HEB) mixers. The receiver uses a quasioptical RF coupling approach where HEB mixers are integrated into double dipole antennas on 1.5 µm thick Si3N4/SiO2 membranes. Spherical mirrors (one per pixel) and backshort distance from the antenna have been used to design the output mixer beam profile. The camera design allows all 16 pixel IF readout in parallel. The gain bandwidth of the HEB mixers on Si3N4/SiO2 membranes was found to be 0.7÷0.9 GHz, which is much smaller than for similar devices on silicon. Application of buffer layers and use of alternative types of membranes (e.g. silicon-on-insulator) is under investigation.
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Klapwijk TM, Barends R, Gao JR, Hajenius M, Baselmans JJA. Improved superconducting hot-electron bolometer devices for the THz range. In: Proc. SPIE. Vol 5498.; 2004. p. 129–39.
Abstract: Improved and reproducible heterodyne mixing (noise temperatures of 950 K at 2.5 THz) has been realized with NbN based hot-electron superconducting devices with low contact resistances. A distributed temperature numerical model of the NbN bridge, based on a local electron and a phonon temperature, has been used to understand the physical conditions during the mixing process. We find that the mixing is predominantly due to the exponential rise of the local resistivity as a function of electron temperature.
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