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Floet DW, Baselmans JJA, Klapwijk TM, Gao JR. Resistive transition of niobium superconducting hot-electron bolometer mixers. Appl Phys Lett. 1998;73(19):2826.
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Zhang W, Miao W, Zhong JQ, Shi SC, Hayton DJ, Vercruyssen N, et al. Temperature dependence of superconducting hot electron bolometers. In: Not published results: 24th international symposium on space terahertz technology.; 2013.
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Hajenius M, Barends R, Gao JR, Klapwijk TM, Baselmans JJA, Baryshev A, et al. Local resistivity and the current-voltage characteristics of hot electron bolometer mixers. IEEE Trans Appl Supercond. 2005;15(2):495–8.
Abstract: Hot-electron bolometer devices, used successfully in low noise heterodyne mixing at frequencies up to 2.5 THz, have been analyzed. A distributed temperature numerical model of the NbN bridge, based on a local electron and a phonon temperature, is used to model pumped IV curves and understand the physical conditions during the mixing process. We argue that the mixing is predominantly due to the strongly temperature dependent local resistivity of the NbN. Experimentally we identify the origins of different transition temperatures in a real HEB device, suggesting the importance of the intrinsic resistive transition of the superconducting bridge in the modeling.
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Klapwijk TM, Barends R, Gao JR, Hajenius M, Baselmans JJA. Improved superconducting hot-electron bolometer devices for the THz range. In: Proc. SPIE. Vol 5498.; 2004. p. 129–39.
Abstract: Improved and reproducible heterodyne mixing (noise temperatures of 950 K at 2.5 THz) has been realized with NbN based hot-electron superconducting devices with low contact resistances. A distributed temperature numerical model of the NbN bridge, based on a local electron and a phonon temperature, has been used to understand the physical conditions during the mixing process. We find that the mixing is predominantly due to the exponential rise of the local resistivity as a function of electron temperature.
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Barends R, Hajenius M, Gao JR, Klapwijk TM. Current-induced vortex unbinding in bolometer mixers. Appl Phys Lett. 2005;87:263506 (1 to 3).
Abstract: We present a description of the current-voltage characteristics of hot electron bolometers in terms of the current-dependent intrinsic resistive transition of NbN films. We find that, by including this current dependence, we can correctly predict the complete current-voltage characteristics, showing excellent agreement with measurements for both low and high bias and for small as well as large devices. It is assumed that the current dependence is due to vortex-antivortex unbinding as described in the Berezinskii–Kosterlitz–Thouless theory. The presented approach will be useful in guiding device optimization for noise and bandwidth.
Keywords: HEB mixer numerical model, HEB model, IV-curves, vortex-antivortex, Berezinskii–Kosterlitz–Thouless theory, diffusion cooling channel, diffusion channel, distributed HEB model, distributed model, self-heating effect, temperature profile
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