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Gol'tsman GN. Hot electron bolometric mixers: new terahertz technology. Infrared Physics & Technology. 1999;40(3):199–206.
Abstract: This paper presents an overview of recent results for NbN phonon-cooled hot electron bolometric (HEB) mixers. The noise temperature of the receivers based on both quasioptical and waveguide versions of HEB mixers has crossed the level of 1 K GHz−1 at 430 GHz (410 K), 600–650 GHz (480 K), 750 GHz (600 K), 810 GHz (780 K) and is close to that level at 1.1 THz (1250 K) and 2.5 THz (4500 K). The gain bandwidth measured for quasioptical HEB mixer at 620 GHz reached 4 GHz and the noise temperature bandwidth was almost 8 GHz. Local oscillator power requirements are about 1 μW for mixers made by photolithography and about 100 nW for mixers made by e-beam lithography. A waveguide version of 800 GHz receiver was installed at the Submillimeter Telescope Observatory on Mt. Graham, AZ, to conduct astronomical observations of known submillimeter lines (CO, J=7→6, CI, J=2→1). It was proved that the receiver works as a practical instrument.
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Gerecht E, Musante CF, Jian H, Zhuang Y, Yngvesson KS, Dickinson J, et al. Improved characteristics of NbN HEB mixers integrated with log-periodic antennas. In: Proc. 10th Int. Symp. Space Terahertz Technol.; 1999. p. 200–7.
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Gousev YP, Olsson HK, Gol'tsman GN, Voronov BM, Gershenzon EM. NbN hot-electron mixer at radiation frequencies between 0.9 THz and 1.2 THz. In: Proc. 9th Int. Symp. Space Terahertz Technol.; 1998. p. 121–9.
Abstract: We report on noise temperature measurements for a NbN phonon-cooled hot-electron mixer at radiation frequencies between 0.9 THz and 1.2 THz. Radiation was coupled to the mixer, placed in a vacuum chamber of He cryostat, by means of a planar spiral antenna and a Si immersion lens. A backward-wave oscillator, tunable throughout the spectral range, delivered an output power of few 1.1W that was enough for optimum operation of the mixer. At 4.2 K ambient temperature and 1.025 THz radiation frequency, we obtained a receiver noise temperature of 1550 K despite of using a relatively noisy room-temperature amplifier at the intermediate frequency port. The noise temperature was fairly constant throughout the entire operation range and for intermediate frequencies from 1 GHz to 2 GHz.
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Il'in KS, Cherednichenko SI, Gol'tsman GN, Currie M, Sobolewski R. Comparative study of the bandwidth of phonon-cooled NbN hot-electron bolometers in submillimeter and optical wavelength ranges. In: Proc. 9th Int. Symp. Space Terahertz Technol.; 1998. p. 323–30.
Abstract: We report the results of the bandwidth measurements of NbN hot-electron bolometers, perfomied in the terahertz frequency domain at 140 GHz and 660 GHz and in time domain in the optical range at the wavelength of 395 nm.. Our studies were done on 3.5-nm-thick NbN films evaporated on sapphire substrates and patterned into ilin-size microbridges. In order to measure the gain bandwidth, we used two identical BWOs (140 or 660 GHz), one functioning as a local oscillator and the other as a signal source. The bandwidth we achieved was 3.5-4 GHz at 4.2 K with the optimal LO and DC biases. Time-domain measurements with a resolution below 300 fs were performed using an electro-optic sampling system, in the temperature range between 4.2 K to 9 K at various values of the bias current and optical power. The obtained response time of the NbN hot-electron bolometer to —100- fs-wide Ti:sapphire laser pulses was about 27 ps, what corresponds to the 5.9 GHz gain bandwidth.
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Semenov AD, Gousev YP, Renk KF, Voronov BM, Gol'tsman GN, Gershenzon EM, et al. Noise characteristics of a NbN hot-electron mixer at 2.5 THz. IEEE Trans Appl Supercond. 1997;7(2):3572–5.
Abstract: The noise temperature of a NbN phonon cooled hot-electron mixer has been measured at a frequency of 2.5 THz for various operating conditions. We obtained for optimal operation a double sideband mixer noise temperature of /spl ap/14000 K and a system conversion loss of /spl ap/23 dB at intermediate frequencies up to 1 GHz. The dependences of the mixer noise temperature on the bias voltage, local oscillator power, and intermediate frequency were consistent with the phenomenological description based on the effective temperature approximation.
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