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Gershenzon EM, Gol'tsman GN, Mel'nikov AP. Binding energy of a carrier with a neutral impurity atom in germanium and in silicon. JETP Lett. 1971;14(5):185–6.
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Gershenzon EM, Gol'tsman GN. Transitions of electrons between excited states of donors in germanium. JETP Lett. 1971;14(2):63–5.
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Gershenzon EM, Gol'tsman GN, Emtsev VV, Mashovets TV, Ptitsyna NG, Ryvkin SM. Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium. JETP Lett. 1971;14(6):241.
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Arutyunov KY, Ramos-Alvarez A, Semenov AV, Korneeva YP, An PP, Korneev AA, et al. Superconductivity in highly disordered NbN nanowires. Nanotechnol. 2016;27(47):47lt02 (1 to 8).
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Morozov P, Lukina M, Shirmanova M, Divochiy A, Dudenkova V, Gol'tsman GN, et al. Singlet oxygen phosphorescence imaging by superconducting single-photon detector and time-correlated single-photon counting. Opt Lett. 2021;46(6):1217–20.
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