Lydersen L, Wiechers C, Wittmann C, Elser D, Skaar J, Makarov V. Hacking commercial quantum cryptography systems by tailored bright illumination. Nat Photon. 2010;4(10):686–9.
Abstract: The peculiar properties of quantum mechanics allow two remote parties to communicate a private, secret key, which is protected from eavesdropping by the laws of physics. So-called quantum key distribution (QKD) implementations always rely on detectors to measure the relevant quantum property of single photons. Here we demonstrate experimentally that the detectors in two commercially available QKD systems can be fully remote-controlled using specially tailored bright illumination. This makes it possible to tracelessly acquire the full secret key; we propose an eavesdropping apparatus built of off-the-shelf components. The loophole is likely to be present in most QKD systems using avalanche photodiodes to detect single photons. We believe that our findings are crucial for strengthening the security of practical QKD, by identifying and patching technological deficiencies.
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Tret’yakov IV, Ryabchun SA, Kaurova NS, Larionov PA, Lobastova AA, Voronov BM, et al. Optimum absorbed heterodyne power for superconducting NbN hot-electron bolometer mixer. Tech Phys Lett. 2010;36(12):1103–5.
Abstract: Absorbed heterodyne power has been measured in a low-noise broadband hot-electron bolometer (HEB) mixer for the terahertz range, operating on the effect of electron heating in the resistive state of an ultrathin superconducting NbN film. It is established that the optimum absorbed heterodyne power for the HEB mixer operating at 2.5 THz is about 100 nW.
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Братман ВЛ, Литвак АГ, Суворов ЕВ. Освоение терагерцевого диапазона: источники и приложения. Успехи физ наук. 2010;181(8):867–874.
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Gaggero A, Nejad SJ, Marsili F, Mattioli F, Leoni R, Bitauld D, et al. Nanowire superconducting single-photon detectors on GaAs for integrated quantum photonic applications. Appl Phys Lett. 2010;97(15):3.
Abstract: We demonstrate efficient nanowire superconducting single photon detectors (SSPDs) based on NbN thin films grown on GaAs. NbN films ranging from 3 to 5 nm in thickness have been deposited by dc magnetron sputtering on GaAs substrates at 350 °C. These films show superconducting properties comparable to similar films grown on sapphire and MgO. In order to demonstrate the potential for monolithic integration, SSPDs were fabricated and measured on GaAs/AlAs Bragg mirrors, showing a clear cavity enhancement, with a peak quantum efficiency of 18.3% at λ = 1300 nm and T = 4.2 K.
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Bonifas AP, McCreery RL. ‘Soft’ Au, Pt and Cu contacts for molecular junctions through surface-diffusion-mediated deposition. Nat Nanotech. 2010;5(8):612–617.
Abstract: Virtually all types of molecular electronic devices depend on electronically addressing a molecule or molecular layer through the formation of a metallic contact. The introduction of molecular devices into integrated circuits will probably depend on the formation of contacts using a vapour deposition technique, but this approach frequently results in the metal atoms penetrating or damaging the molecular layer. Here, we report a method of forming 'soft' metallic contacts on molecular layers through surface-diffusion-mediated deposition, in which the metal atoms are deposited remotely and then diffuse onto the molecular layer, thus eliminating the problems of penetration and damage. Molecular junctions fabricated by this method exhibit excellent yield (typically >90%) and reproducibility, and allow examination of the effects of molecular-layer structure, thickness and contact work function.
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