Freer EM, Grachev O, Duan X, Martin S, Stumbo DP. High-yield self-limiting single-nanowire assembly with dielectrophoresis. Nat Nanotech. 2010;5(7):525–530.
Abstract: Single-crystal nanowire transistors and other nanowire-based devices could have applications in large-area and flexible electronics if conventional top-down fabrication techniques can be integrated with high-precision bottom-up nanowire assembly. Here, we extend dielectrophoretic nanowire assembly to achieve a 98.5% yield of single nanowires assembled over 16,000 patterned electrode sites with submicrometre alignment precision. The balancing of surface, hydrodynamic and dielectrophoretic forces makes the self-assembly process controllable, and a hydrodynamic force component makes it self-limiting. Our approach represents a methodology to quantify nanowire assembly, and makes single nanowire assembly possible over an area limited only by the ability to reproduce process conditions uniformly.
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Konstantatos G, Sargent EH. Nanostructured materials for photon detection. Nat Nanotech. 2010;5(6):391–400.
Abstract: The detection of photons underpins imaging, spectroscopy, fibre-optic communications and time-gated distance measurements. Nanostructured materials are attractive for detection applications because they can be integrated with conventional silicon electronics and flexible, large-area substrates, and can be processed from the solution phase using established techniques such as spin casting, spray coating and layer-by-layer deposition. In addition, their performance has improved rapidly in recent years. Here we review progress in light sensing using nanostructured materials, focusing on solution-processed materials such as colloidal quantum dots and metal nanoparticles. These devices exhibit phenomena such as absorption of ultraviolet light, plasmonic enhancement of absorption, size-based spectral tuning, multiexciton generation, and charge carrier storage in surface and interface traps.
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Stevens MJ, Baek B, Dauler EA, Kerman AJ, Molnar RJ, Hamilton SA, et al. High-order temporal coherences of
chaotic and laser light. Opt Express. 2010;18(2):1430–7.
Abstract: We demonstrate a new approach to measuring high-order temporal coherences that uses a four-element superconducting nanowire single-photon detector. The four independent, interleaved single-photon-sensitive elements parse a single spatial mode of an optical beam over dimensions smaller than the minimum diffraction-limited spot size. Integrating this device with four-channel time-tagging electronics to generate multi-start, multi-stop histograms enables measurement of temporal coherences up to fourth order for a continuous range of all associated time delays. We observe high-order photon bunching from a chaotic, pseudo-thermal light source, measuring maximum third- and fourth-order coherence values of 5.87 ± 0.17 and 23.1 ± 1.8, respectively, in agreement with the theoretically predicted values of 3! = 6 and 4! = 24. Laser light, by contrast, is confirmed to have coherence values of approximately 1 for second, third and fourth orders at all time delays.
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Zhong T, Hu X, Wong FNC, Berggren KK, Roberts TD, Battle P. High-quality fiber-optic polarization entanglement distribution at 1.3 μm telecom wavelength. Opt Lett. 2010;35(9):1392–4.
Abstract: We demonstrate high-quality distribution of 1.3 μm polarization-entangled photons generated from a fiber-coupled periodically poled KTiOPO4 waveguide over 200 m fiber-optic cables. Time-multiplexed measurements with a 19% efficient superconducting nanowire single-photon detector at the remote location show a detected flux of 5.8 pairs / s at a pump power of 25 μW and an average two-photon quantum-interference visibility of 97.7% without subtraction of accidentals.
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Mannino G, Spinella C, Ruggeri R, La Magna A, Fisicaro G, Fazio E, et al. Crystallization of implanted amorphous silicon during millisecond annealing by infrared laser irradiation. Appl Phys Lett. 2010;97(2):3.
Abstract: We investigated the homogenous nucleation of crystalline grains in amorphous Si during transient temperature pulse of few milliseconds IR laser irradiation. The crystallized volume fraction is ~80%. Significant crystallization occurs in nonsteady regime because of the rapid temperature variation (106 °C/s). Our model combines the time evolution of the crystal grain population with the consumption of the amorphous volume due to the growth of grains. Thanks to the experimental approach based on a laser source to heat α-Si and the theoretical model we extended the description of the spontaneous crystallization up to 1323 K or 250 K above the temperature investigated by conventional annealing.
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