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Author Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S.
Title Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K Type Journal Article
Year 1996 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 64 Issue 5 Pages 404-409
Keywords 2DEG, AlGaAs/GaAs heterostructures
Abstract The temperature dependence of the energy relaxation time τe (T) of a two-dimensional electron gas at an AlGaAs/GaAs heterointerface is measured under quasiequilibrium conditions in the region of the transition from scattering by acoustic phonons to scattering with the participation of optical phonons. The temperature interval of constant τe, where scattering by the deformation potential predominates, is determined. In the preceding, low-temperature region, where piezoacoustic and deformation-potential-induced scattering processes coexist, τ e decreases slowly with increasing temperature. Optical phonons start to participate in the scattering processes at T∼25 K (the characteristic phonon lifetime was equal to τLOτ4.5 ps). The energy losses calculated from the τe data in a model with an effective nonequilibrium electron temperature agree with the published data obtained under strong heating conditions.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0021-3640 ISBN Medium
Area Expedition Conference
Notes (up) http://jetpletters.ru/ps/981/article_14955.shtml (“Прямые измерения времен энергетической релаксации на гетерогранице AlGaAs/GaAs в диапазоне 4.2 – 50 К”) Approved no
Call Number Serial 1608
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Author Vakhtomin, Y. B.; Finkel, M. I.; Antipov, S. V.; Smirnov, K. V.; Kaurova, N. S.; Drakinskii, V. N.; Voronov, B. M.; Gol’tsman, G. N.
Title The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer Type Journal Article
Year 2003 Publication J. of communications technol. & electronics Abbreviated Journal J. of communications technol. & electronics
Volume 48 Issue 6 Pages 671-675
Keywords NbN HEB mixers
Abstract Measurements of the intermediate frequency band 900 GHz of mixers based on the electron heating effect (EHE) in 2-nm- and 3.5-nm-thick superconducting NbN films sputtered on MgO and Si substrates with buffer MgO layers are presented. A 2-nm-thick superconducting NbN film with a critical temperature of 9.2 K has been obtained for the first time using a buffer MgO layer.
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Publisher MAIK Nauka/Interperiodica, Birmingham, AL Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1064-2269 ISBN Medium
Area Expedition Conference
Notes (up) https://elibrary.ru/item.asp?id=17302119 (Полоса преобразования смесителей на эффекте разогрева электронов в ультратонких пленках NbN на подложках из Si с подслоем MgO) Approved no
Call Number Vakhtomin2003 Serial 1522
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Author Sergeev, A. V.; Semenov, A. D.; Kouminov, P.; Trifonov, V.; Goghidze, I. G.; Karasik, B. S.; Gol’tsman, G. N.; Gershenzon, E. M.
Title Transparency of a YBa2Cu3O7-film/substrate interface for thermal phonons measured by means of voltage response to radiation Type Journal Article
Year 1994 Publication Phys. Rev. B Condens. Matter. Abbreviated Journal Phys. Rev. B Condens. Matter.
Volume 49 Issue 13 Pages 9091-9096
Keywords YBCO films
Abstract The transparency of a film/substrate interface for thermal phonons was investigated for YBa2Cu3O7 thin films deposited on MgO, Al2O3, LaAlO3, NdGaO3, and ZrO2 substrates. Both voltage response to pulsed-visible and to continuously modulated far-infrared radiation show two regimes of heat escape from the film to the substrate. That one dominated by the thermal boundary resistance at the film/substrate interface provides an initial exponential decay of the response. The other one prevailing at longer times or smaller modulation frequencies causes much slower decay and is governed by phonon diffusion in the substrate. The transparency of the boundary for phonons incident from the film on the substrate and also from the substrate on the film was determined separately from the characteristic time of the exponential decay and from the time at which one regime was changed to the other. Taking into account the specific heat of optical phonons and the temperature dependence of the group velocity of acoustic phonons, we show that the body of experimental data agrees with acoustic mismatch theory rather than with the model that assumes strong diffusive scattering of phonons at the interface.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0163-1829 ISBN Medium
Area Expedition Conference
Notes (up) PMID:10009690 Approved no
Call Number Serial 1648
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Author Korneev, A.; Divochiy, A.; Tarkhov, M.; Minaeva, O.; Seleznev, V.; Kaurova, N.; Voronov, B.; Okunev, O.; Chulkova, G.; Milostnaya, I.; Smirnov, K.; Gol’tsman, G.
Title Superconducting NbN-nanowire single-photon detectors capable of photon number resolving Type Conference Article
Year 2008 Publication Supercond. News Forum Abbreviated Journal Supercond. News Forum
Volume Issue Pages
Keywords PNR SSPD, SNSPD
Abstract We present our latest generation of ultra-fast superconducting NbN single-photon detectors (SSPD) capable of photon-number resolving (PNR). The novel SSPDs combine 10 μm x 10 μm active area with low kinetic inductance and PNR capability. That resulted in significantly reduced photoresponse pulse duration, allowing for GHz counting rates. The detector’s response magnitude is directly proportional to the number of incident photons, which makes this feature easy to use. We present experimental data on the performance of the PNR SSPDs. These detectors are perfectly suited for fibreless free-space telecommunications, as well as for ultra-fast quantum cryptography and quantum computing.
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Notes (up) Reference No. ST34, paper # 012307, eventually not pulished (skipped) at https://iopscience.iop.org/issue/0953-2048/21/1 Approved no
Call Number RPLAB @ sasha @ korneevsuperconducting Serial 1046
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Author Hübers, H.-W.; Semenov, A.; Richter, H.; Birk, M.; Krocka, M.; Mair, U.; Smirnov, K.; Gol’tsman, G.; Voronov, B.
Title Terahertz Heterodyn Receiver with a hot-electron bolometer mixer Type Conference Article
Year 2002 Publication Far-IR, Sub-mm & MM Detector Technology Workshop Abbreviated Journal Far-IR, Sub-mm & MM Detector Technology Workshop
Volume Issue Pages 3-24
Keywords NbN HEB mixers
Abstract During the past decade major advances have been made regarding low noise mixers for terahertz (THz) heterodyne receivers. State of the art hot-electron-bolometer (HEB) mixers have noise temperatures close to the quantum limit and require less than a µW power from the local oscillator (LO). The technology is now at a point where the performance of a practical receiver employing such mixer, rather than the figures of merit of the mixer itself, are of major concern. We have incorporated a phonon-cooled NbN HEB mixer in a 2.5 THz heterodyne receiver and investigated the performance of the receiver. This yields important information for the development of heterodyne receivers such as GREAT (German receiver for astronomy at THz frequencies aboard SOFIA) [1] and TELIS (Terahertz limb sounder), a balloon borne heterodyne receiver for atmospheric research [2]. Both are currently under development at DLR.
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Publisher NASA Place of Publication Editor Wolf, U.; Farhoomand, J.; McCreight, C.R.
Language Summary Language Original Title
Series Editor Series Title NASA CP Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes (up) Volume: 211408 Approved no
Call Number Serial 1537
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