Елезов МС, Щербатенко МЛ, Сыч ДВ, Гольцман ГН. Практические особенности работы оптоволоконного квантового приемника Кеннеди. In: Proc. IWQO.; 2019. p. 303–5.
Abstract: Мы рассматриваем практические особенности работы квантового приемника на основе схемы Кеннеди, собранного из стандартных оптоволоконных элементов и сверхпроводникового детектора одиночных фотонов. Приемник разработан для различения двух фазовомодулированных когерентных состояний света на длине волны 1,5 микрона в непрерывном режиме с частотой модуляции 200 КГц и уровнем ошибок различения примерно в два раза ниже стандартного квантового предела.
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Arutyunov KY, Ramos-Álvarez A, Semenov AV, Korneeva YP, An PP, Korneev AA, et al. Quasi-1-dimensional superconductivity in highly disordered NbN nanowires [Internet].; 2016 [cited 2024 Aug 19].arXiv:1602.07932v1 [cond-mat.supr-con]
Abstract: The topic of superconductivity in strongly disordered materials has attracted a significant attention. In particular vivid debates are related to the subject of intrinsic spatial inhomogeneity responsible for non-BCS relation between the superconducting gap and the pairing potential. Here we report experimental study of electron transport properties of narrow NbN nanowires with effective cross sections of the order of the debated inhomogeneity scales. We find that conventional models based on phase slip concept provide reasonable fits for the shape of the R(T) transition curve. Temperature dependence of the critical current follows the text-book Ginzburg-Landau prediction for quasi-one-dimensional superconducting channel Ic~(1-T/Tc)^3/2. Hence, one may conclude that the intrinsic electronic inhomogeneity either does not exist in our structures, or, if exist, does not affect their resistive state properties.
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Arutyunov KY, Ramos-Alvarez A, Semenov AV, Korneeva YP, An PP, Korneev AA, et al. Superconductivity in highly disordered NbN nanowires. Nanotechnol. 2016;27(47):47lt02 (1 to 8).
Abstract: The topic of superconductivity in strongly disordered materials has attracted significant attention. These materials appear to be rather promising for fabrication of various nanoscale devices such as bolometers and transition edge sensors of electromagnetic radiation. The vividly debated subject of intrinsic spatial inhomogeneity responsible for the non-Bardeen-Cooper-Schrieffer relation between the superconducting gap and the pairing potential is crucial both for understanding the fundamental issues of superconductivity in highly disordered superconductors, and for the operation of corresponding nanoelectronic devices. Here we report an experimental study of the electron transport properties of narrow NbN nanowires with effective cross sections of the order of the debated inhomogeneity scales. The temperature dependence of the critical current follows the textbook Ginzburg-Landau prediction for the quasi-one-dimensional superconducting channel I c approximately (1-T/T c)(3/2). We find that conventional models based on the the phase slip mechanism provide reasonable fits for the shape of R(T) transitions. Better agreement with R(T) data can be achieved assuming the existence of short 'weak links' with slightly reduced local critical temperature T c. Hence, one may conclude that an 'exotic' intrinsic electronic inhomogeneity either does not exist in our structures, or, if it does exist, it does not affect their resistive state properties, or does not provide any specific impact distinguishable from conventional weak links.
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Pekker D, Shah N, Sahu M, Bezryadin A, Goldbart PM. Stochastic dynamics of phase-slip trains and superconductive-resistive switching in current-biased nanowires. Phys. Rev. B. 2009;80:214525 (1 to 17).
Abstract: Superconducting nanowires fabricated via carbon-nanotube templating can be used to realize and study quasi-one-dimensional superconductors. However, measurement of the linear resistance of these nanowires have been inconclusive in determining the low-temperature behavior of phase-slip fluctuations, both quantal and thermal. Thus, we are motivated to study the nonlinear current-voltage characteristics in current-biased nanowires and the stochastic dynamics of superconductive-resistive switching, as a way of probing phase-slip events. In particular, we address the question: can a single phase-slip event occurring somewhere along the wire—during which the order-parameter fluctuates to zero—induce switching, via the local heating it causes? We explore this and related issues by constructing a stochastic model for the time evolution of the temperature in a nanowire whose ends are maintained at a fixed temperature. We derive the corresponding master equation as a tool for evaluating and analyzing the mean switching time at a given value of current (smaller than the depairing critical current). The model indicates that although, in general, several phase-slip events are necessary to induce switching via a thermal runaway, there is indeed a regime of temperatures and currents in which a single event is sufficient. We carry out a detailed comparison of the results of the model with experimental measurements of the distribution of switching currents, and provide an explanation for the rather counterintuitive broadening of the distribution width that is observed upon lowering the temperature. Moreover, we identify a regime in which the experiments are probing individual phase-slip events, and thus offer a way of unearthing and exploring the physics of nanoscale quantum tunneling of the one-dimensional collective quantum field associated with the superconducting order parameter.
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Anthore A, Pothier H, Esteve D. Density of states in a superconductor carrying a supercurrent. Phys Rev Lett. 2003;90(12):127001 (1 to 4).
Abstract: We have measured the tunneling density of states (DOS) in a superconductor carrying a supercurrent or exposed to an external magnetic field. The pair correlations are weakened by the supercurrent, leading to a modification of the DOS and to a reduction of the gap. As predicted by the theory of superconductivity in diffusive metals, we find that this effect is similar to that of an external magnetic field.
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