Abstract: In this paper, we investigated the influence of the GaN buffer layer on the phonon escape time of phonon-cooled hot electron bolometers (HEBs) based on NbN material and compared our findings to conventionally employed Si substrate. The presented experimental setup and operation of the HEB close to the critical temperature of the NbN film allowed for the extraction of phonon escape time in a simplified manner. Two independent experiments were performed at GARD/Chalmers and MSPU on a similar experimental setup at frequencies of approximately 180 and 140 GHz, respectively, and have shown reproducible and consistent results. By fitting the normalized IF measurement data to the heat balance equations, the escape time as a fitting parameter has been deduced and amounts to 45 ps for the HEB based on Si substrate as in contrast to a significantly reduced escape time of 18 ps for the HEB utilizing the GaN buffer layer under the assumption that no additional electron diffusion has taken place. This study indicates a high phonon transmissivity of the NbN-to-GaN interface and a prospective increase of IF bandwidth for HEB made of NbN on GaN buffer layers, which is desirable for future THz HEB heterodyne receivers.

Abstract: A new class of microwave-operated THz power detectors based on the NbN hot-electron-bolometer (HEB) mixer is proposed. The injected microwave signal ( 1 GHz) serves the dual purpose of pumping the HEB element and enabling the read-out of the internal state of the device. A cryogenic amplifier amplifies the reflected microwave signal from the device and a homodyne scheme recovers the effects of the incident THz radiation. Two modes of operation have been identified, depending on the level of incident radiation. For weak signals, we use a chopper to chop the incident radiation against a black body reference and a lock-in amplifier to perform synchronous detection of the homodyne readout. The voltage measured is proportional to the incident power, and we estimate an optical noise equivalent power of  5pW/ √Hz at 0.83 THz. At higher signal levels, the homodyne circuit recovers the stream of steady relaxation oscillation pulses from the HEB device. The frequency of these pulses is in the MHz frequency range and bears a linear relationship with the incident THz radiation over an input power range of  15 dB. A digital frequency counter is used to measure THz power. The applicable power range is between 1 nW and 1 μW.

Abstract: Detectors in THz range with high sensitivity are very essential nowadays in different fields: space technology, atmospheric research, medicine and security. The most sensitive heterodyne detectors below 1 THz are the SIS- mixers due to its extremely high non-linearity and low noise level. Nevertheless, their effective range is strongly limited by superconducting gap Δ (about 1 THz for NbN circuits). Above 1 THz the detectors based on HEB (hot electron bolometers) are more effective [1]; their operation frequency is not limited from above and can be up to 70 THz [2]. HEBs can perform as both direct and heterodyne detectors (mixers). All HEB-mixers are used with external heterodyne, most useful are synthesizer with multipliers, quantum cascade lasers or far infrared lasers and backward-wave oscillators. Superconducting integrated receiver (SIR) is based on implementation of both SIS-miser and flux flow oscillator (FFO) acting as heterodyne at single chip [3]. Such receiver has been successfully applied at TELIS balloon-borne instrument for study of atmospheric constituents [4] and looks as very promising device for other THz missions including space research. Thus, there is a task to expand its operating range to higher frequencies. The frequency range of the SIR the operation is limited by both the SIS-mixer and the FFO maximum frequencies. The idea of present work is implementation of the HEB as a mixer in the SIR instead of the SIS traditionally used. We introduce the first results of integrating the HEB-mixer coupled to planar slot antenna with the FFO on one chip. For properly FFO operation the SIS harmonic mixer is used to phase lock the oscillator. The scheme of the SIR based on the HEB- mixer is presented in fig. 1. We have demonstrated the principal possibility of integration of both the HEB-mixer and the flux-flow oscillator on a single chip and succeed with sufficient power coupling for properly receiver operation. We measured the direct response of the HEB coupled to the antenna at THz frequencies by the FTS setup and noise temperature of the receiver with standard Y- factor measuring technique. The SIR operating range 450-620 GHz was achieved with the best uncorrected noise temperature of about 1000 К. One should note that it is still quite low frequencies for effective operation of the HEB-mixer; therefore we expect to obtain the better results for frequencies above 700 GHz (up to 1.2 THz). Another additional task is to increase the FFO frequencies by using NbTiN electrodes instead of NbN; currently we are working on this issue. This work was supported by the RFBR grant, the Ministry of Education and Science of Russia and Russian Academy of Sciences. References 1. D. Semenov, H.-W. Hubers, J. Schubert, G. N. Gol’tsman, A. I. Elantiev, B. M. Voronov, E. M. Gershenzon, Design and performance of the lattice-cooled hot-electron terahertz mixer, J. Appl. Phys. 88, 6758, 2000. 2. Maslennikov S. N., Finkel M. I., Antipov S. V. et al. Spiral antenna coupled and directly coupled NbN HEB mixers in the frequency range from 1 to 70THz. Proc. 17 th international symposium on space terahertz technology. Paris, France: 2006.—may. Pp. 177 – 179. 3. V.P. Koshelets, S.V. Shitov. Integrated Superconducting Receivers. Supercond. Sci. Technol. Vol. 13. P. R53-R59. 2000. 4. Gert de Lange, Dick Boersma, Johannes Dercksen et.al. Development and Characterization of the Superconducting Integrated Receiver Channel of the TELIS Atmospheric Sounder. Supercond. Sci. Technol. vol. 23, No 4, 045016 (8pp). 2010.