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Рябчун СА. Широкополосные высокостабильные терагерцовые смесители на горячих электронах из тонких сверхпроводниковых пленок NbN [Ph.D. thesis].; 2009.
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Гольцман ГН, Лудков ДН. Сверхпроводниковые смесители на горячих электронах терагерцового диапазона и их применение в радиоастрономии. Изв. высших учебных заведений. Радиофизика. 2003;46(8/9).
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Uzawa Y, Miki S, Wang Z, Kawakami A, Kroug M, Yagoubov P, et al. Performance of a quasi-optical NbN hot-electron bolometric mixer at terahertz frequencies. Supercond Sci Technol. 2002;15(1):141–5.
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Cherednichenko S, Drakinskiy V, Baubert J, Lecomte B, Dauplay F, Krieg JM, et al. 2.5 THz multipixel heterodyne receiver based on NbN HEB mixers. In: Proc. SPIE. Vol 6275.; 2006. 62750I (1 to 11).
Abstract: A 16 pixel heterodyne receiver for 2.5 THz has been developed based on NbN superconducting hot-electron bolometer (HEB) mixers. The receiver uses a quasioptical RF coupling approach where HEB mixers are integrated into double dipole antennas on 1.5 µm thick Si3N4/SiO2 membranes. Spherical mirrors (one per pixel) and backshort distance from the antenna have been used to design the output mixer beam profile. The camera design allows all 16 pixel IF readout in parallel. The gain bandwidth of the HEB mixers on Si3N4/SiO2 membranes was found to be 0.7÷0.9 GHz, which is much smaller than for similar devices on silicon. Application of buffer layers and use of alternative types of membranes (e.g. silicon-on-insulator) is under investigation.
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Cao A, Jiang L, Chen SH, Antipov SV, Shi SC. IF gain bandwidth of a quasi-optical NbN superconducting HEB mixer. In: Proc. International conference on microwave and millimeter wave technology. Builin; 2007. p. 1–3.
Abstract: In this paper, the intermediate frequency (IF) gain bandwidth of a quasi-optical NbN superconducting hot-electron bolometer (HEB) mixer is investigated at 500 GHz with an IF system incorporating with a frequency down-converting scheme which is able to sweep the IF signal in a frequency range of 0.3-4 GHz. The IF gain bandwidth of the device is measured to be 1.5 GHz when it is biased at a voltage of the minimum noise temperature, and becomes larger when the bias voltage increases.
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