Romijn J, Klapwijk TM, Renne MJ, Mooij JE. Critical pair-breaking current in superconducting aluminum strips far below Tc. Phys Rev B. 1982;26(7):3648–55.
Abstract: Critical currents of narrow, thin aluminum strips have been measured as a function of temperature. For the smallest samples uniformity of the current density is obtained over a large temperature range. Hence the intrinsic limit on the currentcarrying capacity of the superconductor was measured outside the Ginzburg-Landau -regime. The experimental values are compared with recent theoretical predictions by Kupriyanov and Lukichev. An approximate method of solving their equations is given, the results of which agree with the exact solution to within 1%. Experimental data are in excellent agreement with theoretical predictions. The absolute values agree if one assumes a Ïl value of 4×10–16 Ωm2 with vF=1.3×106 m/s. This value for Ïl is the same as that found from measurements of the anomalous skin effect but differs from values extracted from size-effect-limited resistivity.
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Huard B, Pothier H, Esteve D, Nagaev KE. Electron heating in metallic resistors at sub-Kelvin temperature. Phys Rev B. 2007;76:165426(1–9).
Abstract: In the presence of Joule heating, the electronic temperature in a metallic resistor placed at sub-Kelvin temperatures can significantly exceed the phonon temperature. Electron cooling proceeds mainly through two processes: electronic diffusion to and from the connecting wires and electron-phonon coupling. The goal of this paper is to present a general solution of the problem in a form that can easily be used in practical situations. As an application, we compute two quantities that depend on the electronic temperature profile: the second and the third cumulant of the current noise at zero frequency, as a function of the voltage across the resistor. We also consider time-dependent heating, an issue relevant for experiments in which current pulses are used, for instance, in time-resolved calorimetry experiments.
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Boogaard GR, Verbruggen AH, Belzig W, Klapwijk T.M. Resistance of superconducting nanowires connected to normal-metal leads. Phys Rev B. 2004;69:220503(R)(1–4).
Abstract: We study experimentally the low temperature resistance of superconducting nanowires connected to normal metal reservoirs. Wefind that a substantial fraction of the nanowires is resistive, down to the lowest tempera-ture measured, indicative of an intrinsic boundary resistance due to the Andreev-conversion of normal current to supercurrent. The results are successfully analyzed in terms of the kinetic equations for diffusive superconductors.
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Ptitsina N. G., Chulkova G. M., Il'in K. S., Sergeev A. V., Pochinkov F. S., Gershenzon E. M. Superconductivity has been found in a number of new compounds between the non-superconducting transition elements and nonmetals such as Si, Ge, and Te. These findings have suggested possible criteria for superconductivity in both elements and compounds. Phys Rev B. 1997;56(16).
Abstract: The temperature dependence of the resistance of films of Al, Be, and NbC with small values of the electron mean free path L=1.5– 10 nm has been measured at 4.2–300 K. The resistance of all the films contains a T^2 contribution that is proportional to the residual resistance; this contribution has been attributed to the interference between the elastic electron scattering and the electron-phonon scattering. Fitting the data to the theory of the electron-phonon-impurity interference „M. Yu. Reiser and A. V. Sergeev, Zh. Eksp. Teor. Fiz. 92, 224 ~1987! @Sov. Phys. JETP 65, 1291 ~1987!#…, we obtain constants of nteraction of the electrons with transverse phonons, and estimate the contribution of this interaction to the electron dephasing rate in thin films of Au, Al, Be, Nb, and NbC. Our estimates are in a good agreement with the experimental data on the inelastic electronphonon scattering in these films. This indicates that the interaction of electrons with transverse phonons controls the electron-phonon relaxation rate in thin-metal films over a broad temperature range.
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Heslinga DR, Shafranjuk SE, van Kempen H, Klapwijk TM. Observation of double-gap-edge Andreev reflection at Si/Nb interfaces by point-contact spectroscopy. Phys Rev B. 1994;49(15):10484–94.
Abstract: Andreev reflection point-contact spectroscopy is performed on a bilayer consisting of 50-nm degenerately doped Si backed with Nb. Due to the short mean free path both injection into and transport across the Si layer are diffusive, in contrast to the ballistic conditions prevailing in clean metal layers. Nevertheless a large Andreev signal is observed in the point-contact characteristics, not reduced by elastic scattering in the Si layer or by interface scattering, but only limited by the transmission coefficient of the metal-semiconductor point contact. Two peaks in the Andreev reflection probability are visible, marking the values of the superconducting energy gap at the interface on the Nb and Si sides. This interpretation is supported by a method of solving the Bogolubov equations analytically using a simplified expression for the variation of the order parameter close to the interface. This observation enables a comparison with theoretical predictions of the gap discontinuity in the proximity effect. It is found that the widely used de Gennes model does not agree with the experimental data.
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