Gao JR, Hajenius M, Tichelaar FD, Klapwijk TM, Voronov B, Grishin E, et al. Monocrystalline NbN nanofilms on a 3C-SiC∕Si substrate. Appl Phys Lett. 2007;91(6):062504 (1 to 3).
Abstract: The authors have realized NbN (100) nanofilms on a 3C-SiC (100)/Si(100) substrate by dc reactive magnetron sputtering at 800°C. High-resolution transmission electron microscopy (HRTEM) is used to characterize the films, showing a monocrystalline structure and confirming epitaxial growth on the 3C-SiC layer. A film ranging in thickness from 3.4to4.1nm shows a superconducting transition temperature of 11.8K, which is the highest reported for NbN films of comparable thickness. The NbN nano-films on 3C-SiC offer a promising alternative to improve terahertz detectors. For comparison, NbN nanofilms grown directly on Si substrates are also studied by HRTEM.
The authors acknowledge S. V. Svetchnikov at National Centre for HRTEM at Delft, who prepared the specimens for HRTEM inspections. This work was supported by the EU through RadioNet and INTAS.
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Ganzevles WFM, Gao JR, de Korte PAJ, Klapwijk TM. Direct response of microstrip line coupled Nb THz hot-electron bolometer mixers. Appl Phys Lett. 2001;79(15):2483–5.
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Floet DW, Baselmans JJA, Klapwijk TM, Gao JR. Resistive transition of niobium superconducting hot-electron bolometer mixers. Appl Phys Lett. 1998;73(19):2826.
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Barends R, Hajenius M, Gao JR, Klapwijk TM. Current-induced vortex unbinding in bolometer mixers. Appl Phys Lett. 2005;87:263506 (1 to 3).
Abstract: We present a description of the current-voltage characteristics of hot electron bolometers in terms of the current-dependent intrinsic resistive transition of NbN films. We find that, by including this current dependence, we can correctly predict the complete current-voltage characteristics, showing excellent agreement with measurements for both low and high bias and for small as well as large devices. It is assumed that the current dependence is due to vortex-antivortex unbinding as described in the Berezinskii–Kosterlitz–Thouless theory. The presented approach will be useful in guiding device optimization for noise and bandwidth.
Keywords: HEB mixer numerical model, HEB model, IV-curves, vortex-antivortex, Berezinskii–Kosterlitz–Thouless theory, diffusion cooling channel, diffusion channel, distributed HEB model, distributed model, self-heating effect, temperature profile
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Zhang W, Khosropanah P, Gao JR, Kollberg EL, Yngvesson KS, Bansal T, et al. Quantum noise in a terahertz hot electron bolometer mixer. Appl Phys Lett. 2010;96(11):111113–(1.
Abstract: We have measured the noise temperature of a single, sensitive superconducting NbN hot electron bolometer (HEB) mixer in a frequency range from 1.6 to 5.3 THz, using a setup with all the key components in vacuum. By analyzing the measured receiver noise temperature using a quantum noise (QN) model for HEB mixers, we confirm the effect of QN. The QN is found to be responsible for about half of the receiver noise at the highest frequency in our measurements. The beta-factor (the quantum efficiency of the HEB) obtained experimentally agrees reasonably well with the calculated value.
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