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Koshelets VP, Ermakov AB, Filippenko LV, Koryukin OV, Khudchenko AV, Sobolev AS, et al. Superconducting submm integrated receiver for TELIS. In: J. Phys.: Conf. Ser. Vol 43.; 2006. p. 1377–80.
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Koshelets VP, Borisov VB, Dmitriev PN, Ermakov AB, Filippenko LV, Khudchenko AV, et al. Integrated submillimeter receiver for TELIS. Joint International Workshop “Nanosensors and Arrays of Quantum Dots and Josephson Junctions for space applications”, 10th International Workshop “From Andreev Reflection to the Earliest Universe”. 2006.
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Gerecht E, Musante CF, Jian H, Zhuang Y, Yngvesson KS, Dickinson J, et al. Improved characteristics of NbN HEB mixers integrated with log-periodic antennas. In: Proc. 10th Int. Symp. Space Terahertz Technol.; 1999. p. 200–7.
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Hoogeveen RWM, Yagoubov PA, de Lange A, Selig AM, Koshelets VP, Ellison B. N., et al. Superconducting integrated receiver development for TELIS. In: Proc. 12th International Symposium on Remote Sensing. Bruges, Belgium; 2005.
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Merkel HF, Yagoubov PA, Kroug M, Khosropanah P, Kollberg EL, Gol’tsman GN, et al. Noise temperature and absorbed LO power measurement methods for NbN phonon-cooled hot electron bolometric mixers at terahertz frequencies. In: Proc. 28th European Microwave Conf. Vol 1.; 1998. p. 294–9.
Abstract: In this paper the absorbed LO power requirements and the noise performance of NbN based phonon-cooled hot electron bolometric (HEB) quasioptical mixers are investigated for RF frequencies in the 0.55-1.1 range The minimal measured DSB noise temperatures are about 500 K at 640 GHz, 600 K at 750 GHz, 850 K at 910 GHz and 1250 K at 1.1 THz. The increase in noise temperature at 1.1THz is attributed to water absorption. The absorbed LO power is measured using a calorimetric approach. The results are subsequently corrected for lattice heating. These values are compared to results of a novel one dimensional hot spot mixer models and to a more traditional isotherm method which tends to underestimate the absorbed LO power for small bias powers. Typically a LO power between 50nW and 100nW is needed to pump the device to the optimal operating point.
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