Semenov AD, Hübers H-W, Schubert J, Gol'tsman GN, Elantiev AI, Voronov BM, et al. Design and performance of the lattice-cooled hot-electron terahertz mixer. J Appl Phys. 2000;88(11):6758–67.
Abstract: We present the measurements and the theoreticalmodel of the frequency-dependent noise temperature of a superconductor lattice-cooled hot-electron bolometer mixer in the terahertz frequency range. The increase of the noise temperature with frequency is a cumulative effect of the nonuniform distribution of the high-frequency current in the bolometer and the charge imbalance, which occurs at the edges of the normal domain and at the contacts with normal metal. We show that under optimal operation the fluctuation sensitivity of the mixer is determined by thermodynamic fluctuations of the noise power, whereas at small biases there appears additional noise, which is probably due to the flux flow. We propose the prescription of how to minimize the influence of the current distribution on the mixer performance.
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Kooi JW, Baselmans JJA, Hajenius M, Gao JR, Klapwijk TM, Dieleman P, et al. IF impedance and mixer gain of NbN hot electron bolometers. J. Appl. Phys.. 2007;101(4):044511.
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Burke PJ, Schoelkopf RJ, Prober DE, Skalare A, Karasik BS, Gaidis MC, et al. Mixing and noise in diffusion and phonon cooled superconducting hot-electron bolometers. J. Appl. Phys.. 1999;85(3):1644–53.
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Cherednichenko S, Drakinskiy V, Baubert J, Krieg J-M, Voronov B, Gol'tsman G, et al. Gain bandwidth of NbN hot-electron bolometer terahertz mixers on 1.5 μm Si3N4 / SiO2 membranes. J Appl Phys. 2007;101(12):124508 (1 to 6).
Abstract: The gain bandwidth of NbN hot-electron bolometer terahertz mixers on electrically thin Si3N4/SiO2 membranes was experimentally investigated and compared with that of HEB mixers on bulk substrates. A gain bandwidth of 3.5 GHz is achieved on bulk silicon, whereas the gain bandwidth is reduced down to 0.6–0.9 GHz for mixers on 1.5 μm Si3N4/SiO2 membranes. We show that application of a MgO buffer layer on the membrane extends the gain bandwidth to 3 GHz. The experimental data were analyzed using the film-substrate acoustic mismatch approach.
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Uchiki H, Kobayashi T, Sakaki H. Photoluminescence and energyâ€loss rates in GaAs quantum wells under highâ€density excitation. J. Appl. Phys.. 1987;62(3):1010–6.
Abstract: The timeâ€resolved luminescence spectra from excited conduction subbands in three samples of multiâ€quantumâ€well GaAs/AlxGa1-xAs (x=0.3 and 1) semiconductors with several well widths and barrier heights were obtained under highâ€density excitations by a 30â€ps pulsed laser at 532 nm, which generated electron–hole pairs to the concentration of 1010–1013/cm2 per well per pulse at 77 K. The temperature and the Fermi energy of electron were determined by fitting best the constructed timeâ€resolved spectrum to the observed, and the timeâ€dependent electron energy was obtained by using these parameters. The energyâ€loss rates of hot electrons are at least twice smaller than the calculated ones induced by the electronâ€polar phonon scattering, including the screening effect due to the high carrier density.
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