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Gao JR, Hajenius M, Baselmans JJA, Yang ZQ, Baryshev AM, Barends R, et al. Twin-slot antenna coupled NbN hot electron bolometer mixers for space applications. In: Proc. 9-th WMSCI. Vol 9. International Institute of Informatics and Systemics; 2005. p. 148–53.
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Palermo C, Varani L, Vaissière J-C, Millithaler J-F, Starikov E, Shiktorov P, et al. Monte Carlo calculation of diffusion coefficient, noise spectral density and noise temperature in HgCdTe. In: Proc. AIP Conf. Vol 780.; 2005. p. 151–4.
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Jiang L, Zhang W, Yao QJ, Lin ZH, Li J, Shi SC, et al. Characterization of a quasi-optical NbN superconducting hot-electron bolometer mixer. In: Proc. PIERS. Vol 1.; 2005. p. 587–90.
Abstract: In this paper, we report the performance of a quasi-optical NbN superconducting HEB (hot electron bolome-ter) mixer measured at 500 GHz. The quasi-optical NbN superconducting HEB mixer is cryogenically cooled bya 4-K close-cycled refrigerator. Its receiver noise temperature and conversion gain are thoroughly investigatedfor different LO pumping levels and dc biases. The lowest receiver noise temperature is found to be approxi-mately 1200 K, and reduced to about 445 K after correcting theloss of the measurement system. The stabilityof the mixer’s IF output power is also demonstrated.
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Gol'tsman GN, Vachtomin YB, Antipov SV, Finkel MI, Maslennikov SN, Smirnov KV, et al. NbN phonon-cooled hot-electron bolometer mixer for terahertz heterodyne receivers. In: Proc. SPIE. Vol 5727.; 2005. p. 95–106.
Abstract: We present the results of our studies of NbN phonon-cooled HEB mixers at terahertz frequencies. The mixers were fabricated from NbN film deposited on a high-resistivity Si substrate with an MgO buffer layer. The mixer element was integrated with a log-periodic spiral antenna. The noise temperature measurements were performed at 2.5 THz and at 3.8 THz local oscillator frequencies for the 3 x 0.2 μm2 active area devices. The best uncorrected receiver noise temperatures found for these frequencies are 1300 K and 3100 K, respectively. A water vapour discharge laser was used as the LO source. The largest gain bandwidth of 5.2 GHz was achieved for a mixer based on 2 nm thick NbN film deposited on MgO layer over Si substrate. The gain bandwidth of the mixer based on 3.5 nm NbN film deposited on Si with MgO is 4.2 GHz and the noise bandwidth for the same device amounts to 5 GHz. We also present the results of our research into decrease of the direct detection contribution to the measured Y-factor and a possible error of noise temperature calculation. The use of a square nickel cell mesh as an IR-filter enabled us to avoid the effect of direct detection and measure apparent value of the noise temperature which was 16% less than that obtained using conventional black polyethylene IR-filter.
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Milostnaya I, Korneev A, Minaeva O, Rubtsova I, Slepneva S, Seleznev V, et al. Superconducting nanostructured detectors capable of single photon counting of mid-infrared optical radiation. In: Rogalski A, Dereniak EL, Sizov FF, editors. Proc. SPIE. Vol 5957. SPIE; 2005. 59570A (1 to 9).
Abstract: We report on our progress in research and development of ultrafast superconducting single-photon detectors (SSPDs) based on ultrathin NbN nanostructures. Our SSPDs were made of the 4-nm-thick NbN films with Tc 11 K, patterned as meander-shaped, 100-nm-wide strips, and covering an area of 10×10 μm2. The detectors exploit a combined detection mechanism, where upon a single-photon absorption, a hotspot of excited electrons and redistribution of the biasing supercurrent, jointly produce a picosecond voltage transient signal across the superconducting nanostripe. The SSPDs are typically operated at 4.2 K, but their sensitivity in the infrared radiation range can be significantly improved by lowering the operating temperature from 4.2 K to 2 K. When operated at 2 K, the SSPD quantum efficiency (QE) for visible light photons reaches 30-40%, which is the saturation value limited by the optical absorption of our 4-nm-thick NbN film. With the wavelength increase of the incident photons,the QE of SSPDs decreases significantly, but even at the wavelength of 6 μm, the detector is able to count single photons and exhibits QE of about 10-2 %. The dark (false) count rate at 2 K is as low as 2x10-4 s,-1 which makes our detector essentially a background-limited sensor. The very low dark-count rate results in a noise equivalent power (NEP) below 10-18 WHz-1/2 for the mid-infrared range (6 μm). Further improvement of the SSPD performance in the mid-infrared range can be obtained by substituting NbN for another, lower-Tc materials with a narrow superconducting gap and low quasiparticles diffusivity. The use of such superconductors should shift the cutoff wavelength below 10 μm.
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