Abstract: The bandwidth of NbN phonon-cooled hot electron bolometer mixers has been systematically investigated with respect to the film thickness and film quality variation. The films, 2.5 to 10 nm thick, were fabricated on sapphire substrates using DC reactive magnetron sputtering. All devices consisted of several parallel strips, each 1 um wide and 2 um long, placed between Ti-Au contact pads. To measure the gain bandwidth we used two identical BWOs operating in the 120-140 GHz frequency range, one functioning as a local oscillator and the other as a signal source. The majority of the measurements were made at an ambient temperature of 4.2 K with optimal LO and DC bias. The maximum 3 dB bandwidth (about 4 GHz) was achieved for the devices made of films which were 2.5-3.5 nm thick, had a high critical temperature, and high critical current density. A theoretical analysis of bandwidth for these mixers based on the two-temperature model gives a good description of the experimental results if one assumes that the electron temperature is equal to the critical temperature.

Abstract: Hot-electron bolometer mixers (HEB’s) are the most promising devices as mixing element for terahertz spectroscopy and astronomy at frequencies beyond 1.4 THz. They have a low noise temperature and low demands on local oscillator (LO) power. 1,2 An important limitation is the IF bandwidth, of the order of a few GHz, and which in principle depends on energy relaxation due to electron- phonon processes and on diffusion-cooling. It has been proposed by Prober that a reduction in length of the HEB would lead to an increased bandwidth. 3 This appeared to be achieved by Tretyakov et al by measuring the gain bandwidth close to the critical temperature of the NbN. 2 Unfortunately, the noise bandwidth of similar devices operated at temperatures around 4.2 K appear not depend on the length. The fundamental problem to be addressed is the position-dependent superconducting state of the HEB- devices under operating conditions, which determines the conditions for the cooling of the hot quasiparticles. Some progress has been made by Barends et al in a semi-empirical model to describe the I,V curves under operating conditions at a bath temperature around 4.2 K. 4 In more recent work Vercruyssen et al have analyzed the I,V curve, without any LO-equivalent bias, of a model NSN system. 5 This work suggests that the most appropriate model for an HEB under operating conditions is that of a potential-well in the superconducting gap in the center of the NbN, analogous the bimodal superconducting state described by Vercruyssen et al. Hot quasiparticles in the well can not diffuse out and can only cool by electron-phonon processes, those with higher energies than the heights of the walls of the well can diffuse out. Using this working hypothesis we have carried out experiments on a sub-micrometer NbN bridge connected to a gold (Au) planar spiral antenna. An in situ process is used to deposit Au on NbN. The Au is removed in the center to define the uncovered NbN, which will act as the superconducting mixer itself. The antenna is deposited on the remaining Au layer on the NbN. The Au contacts suppress the energy gap of the NbN film located underneath the gold layer 7,8 . The measured resistive transition is shown in Fig.1. It clearly shows a T c of the bilayer at 6.2 K and the resistive transition of the NbN itself around 9 K. In addition we show the measured noise bandwidth (red squares) for different bath temperatures. Clearly the noise bandwidth increases strongly by increasing the bath temperature from 5 K to 8 K, up to 13 GHz. We interpret this pattern as evidence for improved out-diffusion of hot electrons due to normal banks and a shallow superconducting potential well compared to k B T. As expected the noise temperature in this regime is much bigger than when biased at 4.2 K. R EFERENCES 1 W. Zhang, P. Khosropanah, J. R. Gao, E. L. Kollberg, K. S. Yngvesson, T. Bansal, R. Barends, and T. M. Klapwijk Appl. Phys. Lett. 96, 111113, (2010). 2 Ivan Tretyakov, Sergey Ryabchun, Matvey Finkel, Anna Maslennikova, Natalia Kaurova, Anastasia Lobastova, Boris Voronov, and Gregory Gol’tsman Appl. Phys. Lett. 98, 033507 (2011). 3 D. E. Prober, Appl. Phys. Lett. 62, 2119 (1992). 4 R. Barends, M. Hajenius, J. R. Gao, and T. M. Klapwijk, Appl. Phys. Lett. 87, 263506 (2005). 5 N. Vercruyssen, T. G. A. Verhagen, M. G. Flokstra, J. P. Pekola, and T. M. Klapwijk Physical Review B 85, 224503 (2012).

Abstract: We report on our recent results of double sideband (DSB) noise temperature and bandwidth measurements of quasi-optical hot electron bolometer (HEB) mixers at local oscillator frequency of 3.8 THz. The HEB mixers used in this work were made of a NbN thin film and had a superconducting transition temperature of about 10.3 K. To couple terahertz radiation, the NbN microbridge (0.2 μm long and 2 μm wide) was integrated with a planar logarithmic-spiral antenna. The mixer chip was glued to an elliptical Si lens clamped tightly to a mixer block mounted on the 4.2 K plate of a liquid helium cryostat. The terahertz radiation was fed into the HEB device through the cryostat window made of a 0.5 mm thick HDPE. A band-pass mesh filter was mounted on the 4.2 K plate to minimize the direct detection effect [1]. We used a gas discharge laser irradiating at 3.8 THz H 2 0 line as a local oscillator (LO). The LO power was combined with a black body broadband radiation via Mylar beam splitter. Our receiver allows heterodyne detection with an intermediate frequency (IF) of a several gigahertz which dictates usage of a wideband SiGe low noise amplifier [2]. The receiver IF output signal was further amplified at room temperature and fed into a square-law power detector through a band-pass filter. The DSB receiver noise temperature was measured using a conventional Y-factor technique at IF of 1.25 GHz and band of 40 MHz. Using wideband amplifiers at both cryogenic and room temperature stages we have estimated IF bandwidth of the HEB mixers used. The obtained results strengthen the position of the HEB mixer as one of the most important tools for submillimeter astronomy. This device operates well above the energy gap (at frequencies above 1 THz) where performance of state-of-the-art SIS mixers starts to degrade. So, HEB mixers are expected to be a device of choice in astrophysical observations (ground-, aircraft- and space-based) at THz frequencies due to its excellent noise performance and low LO power requirements. The HEB mixers will be in operation on Millimetron Space Observatory. References 1. J. J. A. Baselmans, A. Baryshev, S. F. Reker, M. Hajenius, J. R. Gao, T. M. Klapwijk, Yu. Vachtomin, S. Maslennikov, S. Antipov, B. Voronov, and G. Gol'tsman, Appl. Phys. Lett., 86, 163503 (2005). 2. Sander Weinreb, Life Fellow, IEEE, Joseph C. Bardin, Student Member, IEEE, and Hamdi Mani, “Design of Cryogenic SiGe Low-Noise Amplifiers”, IEEE Transactions on Microwave Theory and Techniques, 55, 11, 2007.