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Author Callen, Herbert. B.; Welton, Theodore A. doi  openurl
  Title Irreversibility and generalized noise Type Journal Article
  Year 1951 Publication Phys. Rev. Abbreviated Journal  
  Volume 83 Issue 1 Pages 34-40  
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  Publisher (down) American Physical Society Place of Publication Editor  
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  Notes Approved no  
  Call Number Serial 214  
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Author Rothwarf, Allen; Taylor, B. N. doi  openurl
  Title Measurement of recombination lifetimes in superconductors Type Journal Article
  Year 1967 Publication Phys. Rev. Lett. Abbreviated Journal  
  Volume 19 Issue 1 Pages 27-30  
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  Publisher (down) American Physical Society Place of Publication Editor  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number MSPU @ s @ Serial 220  
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Author Parker, W. H. doi  openurl
  Title Modified heating theory of nonequilibrium superconductors Type Journal Article
  Year 1975 Publication Phys. Rev. B Abbreviated Journal  
  Volume 12 Issue 9 Pages 3667-3672  
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  Publisher (down) American Physical Society Place of Publication Editor  
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  Notes Approved no  
  Call Number mht_Parker_1975 Serial 221  
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Author Johnson, M. A.; Betz, A. L.; Townes, C. H. openurl 
  Title 10-μm Heterodyne Stellar Interferometer Type Journal Article
  Year 1974 Publication Phys. Rev. Lett. Abbreviated Journal  
  Volume 33 Issue 27 Pages 1617-1620  
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  Corporate Author Thesis  
  Publisher (down) American Physical Society Place of Publication Editor  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 228  
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Author Heslinga, D. R.; Shafranjuk, S. E.; van Kempen, H.; Klapwijk, T. M. url  doi
openurl 
  Title Observation of double-gap-edge Andreev reflection at Si/Nb interfaces by point-contact spectroscopy Type Journal Article
  Year 1994 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B  
  Volume 49 Issue 15 Pages 10484-10494  
  Keywords Nb, Si, Nb-Si, Nb/Si, Si/Nb, Andreev reflection, point-contact spectroscopy  
  Abstract Andreev reflection point-contact spectroscopy is performed on a bilayer consisting of 50-nm degenerately doped Si backed with Nb. Due to the short mean free path both injection into and transport across the Si layer are diffusive, in contrast to the ballistic conditions prevailing in clean metal layers. Nevertheless a large Andreev signal is observed in the point-contact characteristics, not reduced by elastic scattering in the Si layer or by interface scattering, but only limited by the transmission coefficient of the metal-semiconductor point contact. Two peaks in the Andreev reflection probability are visible, marking the values of the superconducting energy gap at the interface on the Nb and Si sides. This interpretation is supported by a method of solving the Bogolubov equations analytically using a simplified expression for the variation of the order parameter close to the interface. This observation enables a comparison with theoretical predictions of the gap discontinuity in the proximity effect. It is found that the widely used de Gennes model does not agree with the experimental data.  
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  Publisher (down) American Physical Society Place of Publication Editor  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1005  
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