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Voevodin EI, Gershenzon EM, Goltsman GN, Ptitsina NG, Chulkova GM. Capture of free holes by charged acceptors in uniaxially deformed Ge. Fizika i Tekhnika Poluprovodnikov. 1988;22(3):540–3.
Abstract: Цель настоящей работы — исследование кинетики примесной фотопроводимости p-Ge при сильном одноосном сжатии в широком диапазоне изменения интенсивности примесного подсвета, создающего свободные дырки, и определение сечения каскадного захвата дырок на мелкие заряженные акцепторы в условиях преобладания электрон-фононного механизма потерь энергии.
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Gershenzon YM, Goltsman GN, Yelantyev AI, Petrova YB, Ptitsina NG, Filatov VS. Lecture demonstrations of properties of superconductors and liquid helium. USSR Rept Phys Math JPRS UPM. 1987;24(7):51.
Abstract: New demonstrations for low temperature physics courses are described. Two transparent Dewar vacuum flasks fitting one inside the other with the external flask for nitrogen and the internal flask for helium are used. The helium temperature can be regulated in the 4.2 to 1.6 K range and the effects of reducing helium to the superfluid state at 2.17 K can be shown: boiling abruptly stops and superfluid flow appears. In order to show the electric and magnetic characteristics of superconductivity, a superconducting NbTi solenoid containing nonsuperconducting wire and germanium and superconducting Nb materials with different critical temperatures is placed in the helium refrigerant vessel. The fall of the resistance at the critical temperatures can be shown. In order to show magnetic field and superconductive current flow properties a shunt of superconductive material is connected in parallel to the coil and is enclosed in a teflon container with a heater which can vary its temperature. When it is heated and not superconductive, magnetic field effects can be demonstrated and when it is unheated and superconducting a continuous current can be demonstrated.
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Gershenzon EM, Goltsman GN, Multanovskii VV, Ptitsina NG. Kinetics of submillimeter impurity and exciton photoconduction in Ge. Optics and Spectroscopy. 1982;52(4):454–5.
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Averkin AS, Shishkin AG, Chichkov VI, Voronov BM, Goltsman GN, Karpov A, et al. Tunable frequency-selective surface based on superconducting split-ring resonators. In: 8th Metamaterials.; 2014.
Abstract: We study a possibility to use the 2D superconducting metamaterial as a tunable frequency-selective surface (FSS). The proposed FSS is made of sub-wavelength size (l/14) metamaterial unit cells, where a split-ring resonator is embedded in a small iris aperture in a metal plane. The split-ring resonator is made of NbN film, and its resonance frequency is tuned by the temperature of the sample, changing the kinetic inductance of NbN film. The Ansoft HFSS simulation predicts the FSS tuning range of about 10-20 %. The developed superconducting FSS may be used as a tunable band-pass filter or modulator.
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Baeva EM, Titova NA, Veyrat L, Sacépé B, Semenov AV, Goltsman GN, et al. Thermal relaxation in metal films limited by diffuson lattice excitations of amorphous substrates. Phys Rev Applied. 2021;15(5):054014.
Abstract: We examine the role of a silicon-based amorphous insulating substrate in the thermal relaxation in thin NbN, InOx, and Au/Ni films at temperatures above 5 K. The samples studied consist of metal bridges on an amorphous insulating layer lying on or suspended above a crystalline substrate. Noise thermometry is used to measure the electron temperature Te of the films as a function of Joule power per unit area P2D. In all samples, we observe a P2D∝Tne dependence, with exponent n≃2, which is inconsistent with both electron-phonon coupling and Kapitza thermal resistance. In suspended samples, the functional dependence of P2D(Te) on the length of the amorphous insulating layer is consistent with the linear temperature dependence of the thermal conductivity, which is related to lattice excitations (diffusons) for a phonon mean free path shorter than the dominant phonon wavelength. Our findings are important for understanding the operation of devices embedded in amorphous dielectrics.
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