Korneev A, Divochiy A, Tarkhov M, Minaeva O, Seleznev V, Kaurova N, et al. Superconducting NbN-nanowire single-photon detectors capable of photon number resolving. In: Supercond. News Forum.; 2008.
Abstract: We present our latest generation of ultra-fast superconducting NbN single-photon detectors (SSPD) capable of photon-number resolving (PNR). The novel SSPDs combine 10 μm x 10 μm active area with low kinetic inductance and PNR capability. That resulted in significantly reduced photoresponse pulse duration, allowing for GHz counting rates. The detector’s response magnitude is directly proportional to the number of incident photons, which makes this feature easy to use. We present experimental data on the performance of the PNR SSPDs. These detectors are perfectly suited for fibreless free-space telecommunications, as well as for ultra-fast quantum cryptography and quantum computing.
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Sidorova MV, Divochiy AV, Vakhtomin YB, Smirnov KV. Ultrafast superconducting single-photon detector with a reduced active area coupled to a tapered lensed single-mode fiber. J. Nanophoton.. 2015;9(1):093051.
Abstract: This paper presents an ultrafast niobium nitride (NbN) superconducting single-photon detector (SSPD) with an active area of 3×3 μm2 that offers better timing performance metrics than the previous SSPD with an active area of 7×7 μm2. The improved SSPD demonstrates a record timing jitter (<25 ps), an ultrashort recovery time (<2 ns), an extremely low dark count rate, and a high detection efficiency in a wide spectral range from visible part to near infrared. The record parameters were obtained due to the development of a new technique providing effective optical coupling between a detector with a reduced active area and a standard single-mode telecommunication fiber. The advantages of the new approach are experimentally confirmed by taking electro-optical measurements.
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Smirnov KV, Vakhtomin YB, Divochiy AV, Ozhegov RV, Pentin IV, Slivinskaya EV, et al. Single-photon detectors for the visible and infrared parts of the spectrum based on NbN nanostructures [abstract]. In: Proc. Progress In Electromagnetics Research Symp. Moscow, Russia; 2009. p. 863–4.
Abstract: The research by the group of Moscow State Pedagogical University into the hot-electron phenomena in thin superconducting films has led to the development of new types ofdetectors [1, 2] and their use both in fundamental and applied studies [3–6]. In this paper, wepresent the results of the development and fabrication of receiving systems for the visible andinfrared parts of the spectrum optimised for use in telecommunication systems and quantumcryptography.
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McCarthy A, Krichel NJ, Gemmell NR, Ren X, Tanner MG, Dorenbos SN, et al. Kilometer-range, high resolution depth imaging via 1560 nm wavelength single-photon detection. Opt Express. 2013;21(7):8904–15.
Abstract: This paper highlights a significant advance in time-of-flight depth imaging: by using a scanning transceiver which incorporated a free-running, low noise superconducting nanowire single-photon detector, we were able to obtain centimeter resolution depth images of low-signature objects in daylight at stand-off distances of the order of one kilometer at the relatively eye-safe wavelength of 1560 nm. The detector used had an efficiency of 18% at 1 kHz dark count rate, and the overall system jitter was ~100 ps. The depth images were acquired by illuminating the scene with an optical output power level of less than 250 µW average, and using per-pixel dwell times in the millisecond regime.
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Manus MKM, Kash JA, Steen SE, Polonsky S, Tsang JC, Knebel DR, et al. PICA: Backside failure analysis of CMOS circuits using picosecond imaging circuit analysis. Microelectronics Reliability. 2000;40:1353–8.
Abstract: Normal operation of complementary metal-oxide semiconductor (CMOS) devices entails the emission of picosecond pulses of light, which can be used to diagnose circuit problems. The pulses that are observed from submicron sized field effect transistors (FETs) are synchronous with logic state switching. Picosecond Imaging Circuit Analysis (PICA), a new optical imaging technique combining imaging with timing, spatially resolves individual devices at the 0.5 micron level and switching events on a 10 picosecond timescale. PICA is used here for the diagnostics of failures on two VLSI microprocessors.
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