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Sahu M, Bae M-H, Rogachev A, Pekker D, Wei T-C, Shah N, et al. Individual topological tunnelling events of a quantum field probed through their macroscopic consequences. Nature Phys. 2009;5:503–8.
Abstract: Phase slips are topological fluctuations that carry the superconducting order-parameter field between distinct current-carrying states. Owing to these phase slips, superconducting nanowires acquire electrical resistance. In such wires, it is well known that at higher temperatures phase slips occur through the process of thermal barrier-crossing by the order-parameter field. At low temperatures, the general expectation is that phase slips should proceed through quantum tunnelling events, which are known as quantum phase slips. However, resistive measurements have produced evidence both for and against the occurrence of quantum phase slips. Here, we report evidence for the observation of individual quantum phase-slip events in homogeneous ultranarrow wires at high bias currents. We accomplish this through measurements of the distribution of switching currents for which the width exhibits a rather counter-intuitive, monotonic increase with decreasing temperature. Importantly, measurements show that in nanowires with larger critical currents, quantum fluctuations dominate thermal fluctuations up to higher temperatures.
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Ovchinnikov YN, Varlamov AA. Fluctuation-dissipative phenomena in a narrow superconducting channel carrying current below critical. arXiv. 2009;0910.2659v1:1–4.
Abstract: The theory of current transport in a narrow superconducting channel accounting for thermal fluctuations is developed. These fluctuations result in the appearance of small but finite dissipation in the sample. The value of corresponding voltage is found as the function of temperature (close to transition temperature) and arbitrary bias current. It is demonstrated that the value of the activation energy (exponential factor in the Arrenius law) when current approaches to the critical one is proportional to (1-J/Jc)^(5/4). This result is in concordance with the one for the affine phenomenon of the Josephson current decay due to the thermal phase fluctuations, where the activation energy proportional (1-J/J_c)^(3/2)(the difference in the exponents is related to the additional current dependence of the order parameter). Found dependence of the activation energy on current explains the enormous discrepancy between the theoretically predicted before and the experimentally observed broadening of the resistive transition.
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Korneeva Y, Florya I, Vdovichev S, Moshkova M, Simonov N, Kaurova N, et al. Comparison of hot-spot formation in NbN and MoN thin superconducting films after photon absorption. In: IEEE Transactions on Applied Superconductivity. Vol 27.; 2017. 5.
Abstract: In superconducting single-photon detectors SSPD
the efficiency of local suppression of superconductivity and hotspot
formation is controlled by diffusivity and electron-phonon
interaction time. Here we selected a material, 3.6-nm-thick MoNx
film, which features diffusivity close to those of NbN traditionally
used for SSPD fabrication, but with electron-phonon interaction
time an order of magnitude larger. In MoNx detectors we study
the dependence of detection efficiency on bias current, photon
energy, and strip width and compare it with NbN SSPD. We
observe non-linear current-energy dependence in MoNx SSPD
and more pronounced plateaus in dependences of detection
efficiency on bias current which we attribute to longer electronphonon
interaction time.
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Rath P, Vetter A, Kovalyuk V, Ferrari S, Kahl O, Nebel C, et al. Travelling-wave single-photon detectors integrated with diamond photonic circuits: operation at visible and telecom wavelengths with a timing jitter down to 23 ps. In: Broquin J-E, Conti GN, editors. Integrated Optics: Devices, Mat. Technol. XX. Vol 9750. Spie; 2016. p. 135–42.
Abstract: We report on the design, fabrication and measurement of travelling-wave superconducting nanowire single-photon detectors (SNSPDs) integrated with polycrystalline diamond photonic circuits. We analyze their performance both in the near-infrared wavelength regime around 1600 nm and at 765 nm. Near-IR detection is important for compatibility with the telecommunication infrastructure, while operation in the visible wavelength range is relevant for compatibility with the emission line of silicon vacancy centers in diamond which can be used as efficient single-photon sources. Our detectors feature high critical currents (up to 31 μA) and high performance in terms of efficiency (up to 74% at 765 nm), noise-equivalent power (down to 4.4×10-19 W/Hz1/2 at 765 nm) and timing jitter (down to 23 ps).
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Korneev A, Divochiy A, Marsili F, Bitauld D, Fiore A, Seleznev V, et al. Superconducting photon number resolving counter for near infrared applications. In: Tománek P, Senderáková D, Hrabovský M, editors. Proc. SPIE. Vol 7138. Spie; 2008. 713828 (1 to 5).
Abstract: We present a novel concept of photon number resolving detector based on 120-nm-wide superconducting stripes made of 4-nm-thick NbN film and connected in parallel (PNR-SSPD). The detector consisting of 5 strips demonstrate a capability to resolve up to 4 photons absorbed simultaneously with the single-photon quantum efficiency of 2.5% and negligibly low dark count rate.
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