Tretyakov I, Svyatodukh S, Chumakova A, Perepelitsa A, Kaurova N, Shurakov A, et al. Room temperature silicon detector for IR range coated with Ag2S quantum dots. In: IRMMW-THz.; 2019.
Abstract: A silicon has been the chief technological semiconducting material of modern microelectronics and has had a strong influence on all aspects of society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared ranges. The expansion of the Si absorption to shorter wavelengths of the infrared range is of considerable interest to optoelectronic applications. By creating impurity states in Si it is possible to cause sub-band gap photon absorption. Here, we present an elegant and effective technology of extending the photoresponse of towards the IR range. Our approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si. The specific sensitivity of the Ag 2 S/Si heterostructure is 10 11 cm√HzW -1 at 1.55μm. Our findings open a path towards the future study and development of Si detectors for technological applications.
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Goltsman G. Quantum-photonic integrated circuits. In: Proc. IWQO.; 2019. p. 22–3.
Abstract: We show the design, a history of development as well as the most successful and promising approaches for QPICs realization based on hybrid nanophotonic-superconducting devices, where one of the key elements of such a circuit is a waveguide integrated superconducting single-photon detector (WSSPD). The potential of integration with fluorescent molecules is discussed also.
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Elezov M, Scherbatenko M, Sych D, Goltsman G, Arakelyan S, Evlyukhin A, et al. Towards the fiber-optic Kennedy quantum receiver. In: EPJ Web Conf. Vol 220.; 2019. 03011 (1 to 2).
Abstract: We consider practical aspects of using standard fiber-optic elements and superconducting nanowire single-photon detectors for the development of a practical quantum receiver based on the Kennedy scheme. Our receiver allows to discriminate two phase-modulated coherent states of light at a wavelength of 1.5 microns in continuous mode with bit rate 200 Kbit/s and error rate about two times below the standard quantum limit.
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Nikogosyan AS, Martirosyan RM, Hakhoumian AA, Makaryan AH, Tadevosyan VR, Goltsman GN, et al. Effect of absorption on the efficiency of terahertz radiation generation in the metal waveguide partially filled with nonlinear crystal LiNbO3, DAST or ZnTe. J Contemp Phys. 2019;54(1):97–104.
Abstract: The influence of terahertz (THz) radiation absorption on the efficiency of generation of coherent THz radiation in the system ‘nonlinear-optical crystal partially filling the cross section of a rectangular metal waveguide’ has been investigated. The efficiency of the nonlinear frequency conversion of optical laser radiation to the THz range depends on the loss in the system and the fulfillment of the phase-matching (FM) condition in a nonlinear crystal. The method of partially filling of a metal waveguide with a nonlinear optical crystal is used to ensure phase matching. The phase matching is achieved by numerical determination of the thickness of the nonlinear crystal, that is the degree of partial filling of the waveguide. The attenuation of THz radiation caused by losses both in the metal walls of the waveguide and in the crystal was studied, taking into account the dimension of the cross section of the waveguide, the degree of partial filling, and the dielectric constant of the crystal. It is shown that the partial filling of the waveguide with a nonlinear crystal results in an increase in the efficiency of generation of THz radiation by an order of magnitude, owing to the decrease in absorption.
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Bandurin D, Svintsov D, Gayduchenko I, Xu S, Principi A, Moskotin M, et al. Resonant terahertz photoresponse and superlattice plasmons in graphene field-effect transistors [abstract]. In: APS March Meeting.; 2019. F14.015.
Abstract: Plasmons, collective oscillations of electron systems, can couple light and electric current, and thus can be used to create compact photodetectors, radiation mixers, and spectrometers. Despite the effort, it has proven challenging to implement plasmonic devices operating at THz frequencies. The material capable to meet this challenge is graphene as it supports long-lived electrically-tunable plasmons. In this talk, we will demonstrate plasmon-assisted resonant detection of THz radiation by antenna-coupled graphene FETs that act as both rectifying elements and plasmonic Fabry-Perot cavities amplifying the photoresponse. We will show that by varying the plasmon velocity using gate voltage, our detectors can be tuned between multiple resonant modes, a functionality that we apply to measure plasmons' wavelength and lifetime in graphene as well as to probe collective modes in its moire minibands. Our approach offers a convenient tool for further plasmonic research that is often difficult under non-ambient conditions and promises a viable route for various THz applications. We acknowledge Leverhulme Trust, Russian Science Foundation Grants N18-72-00234 and 17-72-30036, Russian Foundation for Basic Research No. 18-57-06001 and 16-29-03402.
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