Baryshev A, Lauria E, Hesper R, Zijlstra T, Wild W. Fixed-tuned waveguide 0.6 THz SIS mixer with wide band IF. In: Harward University, editor. Proc. 13th Int. Symp. Space Terahertz Technol. Cambridge, MA, USA; 2002. p. 1–9.
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Blundell R, Barrett J, H. Gibson CG, Hunter T, Kimberk R, Leiker S, et al. Prospects for terahertz radio astronomy from Northean Chile. In: Harvard university, editor. Proc. 13th Int. Symp. Space Terahertz Technol. Cambridge, MA, USA; 2002. p. 159–66.
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Meledin D, Tong CY-E, Blundell R, Kaurova N, Smirnov K, Voronov B, et al. The sensitivity and IF bandwidth of waveguide NbN hot electron bolometer mixers on MgO buffer layers over crystalline quartz. In: Harvard university, editor. Proc. 13th Int. Symp. Space Terahertz Technol. Cambridge, MA, USA; 2002. p. 65–72.
Abstract: We have developed and characterized waveguide phonon-cooled NbN Hot Electron Bolometer (FMB) mixers fabricated from a 3-4 nm thick NbN film deposited on a 200nm thick MgO buffer layer over crystalline quartz. Double side band receiver noise temperatures of 900-1050 K at 1.035 THz, and 1300-1400 K at 1.26 THz have been measured at an intermediate frequency of 1.5 GHz. The intermediate frequency bandwidth, measured at 0.8 THz LO frequency, is 3.2 GHz at the optimal bias point for low noise receiver operation.
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Vahtomin YB, Finkel MI, Antipov SV, Voronov BM, Smirnov KV, Kaurova NS, et al. Gain bandwidth of phonon-cooled HEB mixer made of NbN thin film with MgO buffer layer on Si. In: Harvard university, editor. Proc. 13th Int. Symp. Space Terahertz Technol. Cambridge, MA, USA; 2002. p. 259–70.
Abstract: We present recently obtained values for gain bandwidth of NbN HEB mixers for different substrates and film thicknesses and for MgO buffer layer on Si at LO frequency of 0.85-1 THz. The maximal bandwidth, 5.2 GHz, was achieved for the device on MgO buffer layer on Si with a 2 nm thick NbN film. Functional devices based on NbN films of such thickness were fabricated for the first time due to an improvement of superconducting properties of NbN film deposited on MgO buffer layer on Si substrate.
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Maslennikov S, Antipov S, Shishkov A, Svechnikov S, Voronov B, Smirnov K, et al. NbN HEB mixer noise temperature measurements with hot/cold load mounted inside the helium cryostat at 300 GHz. In: Proc. Int. Student Seminar on Microwave Appl. of Novel Physical Phenomena supported by IEEE. St.-Petersburg: LETI; 2002.
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