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Zubkova E, An P, Kovalyuk V, Korneev A, Ferrari S, Pernice W, et al. Integrated Bragg waveguides as an efficient optical notch filter on silicon nitride platform. In: J. Phys.: Conf. Ser. Vol 917.; 2017. 062042.
Abstract: We modeled and fabricated integrated optical Bragg waveguides on a silicon nitride (Si3N4) platform. These waveguides would serve as efficient notch-filters with the desired characteristics. Transmission spectra of the fabricated integrated notch filters have been measured and attenuation at the desired wavelength of 1550 nm down to -43 dB was observed. Performance of the filters has been studied depending on different parameters, such as pitch, filling factor, and height of teeth of the Bragg grating
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Chuprina IN, An PP, Zubkova EG, Kovalyuk VV, Kalachev AA, Gol'tsman GN. Optimisation of spontaneous four-wave mixing in a ring microcavity. In: J. Phys.: Conf. Ser. Vol 47.; 2017. p. 887–91.
Abstract: Abstract. A theory of spontaneous four-wave mixing in a ring microcavity is developed. The rate of emission of biphotons for pulsed and monochromatic pumping with allowance for the disper- sion of group velocities is analytically calculated. In the first case, pulses in the form of an increasing exponential are considered, which are optimal for excitation of an individual resonator mode. The behaviour of the group velocity dispersion as a function of the width and height of the waveguide is studied for a specific case of a ring microcavity made of silicon nitride. The results of the numeri- cal calculation are in good agreement with the experimental data. The ring microcavity is made of two types of waveguides: com- pletely etched and half etched. It is found that the latter allow for better control over the parameters in the manufacturing process, making them more predictable.
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Shurakov A, Mikhailov D, Belikov I, Kaurova N, Zilberley T, Prikhodko A, et al. Planar Schottky diode with a Γ-shaped anode suspended bridge. In: J. Phys.: Conf. Ser. Vol 1695.; 2020. 012154.
Abstract: In this paper we report on the fabrication of a planar Schottky diode utilizing a Г-shaped anode suspended bridge. The bridge maintains transition between the top and bottom level planes of a 1.4 µm thick GaAs mesa. To implement the profile of a suspended bridge and inward tilt of a mesa wall adjacent to it, we make use of an anisotropic etching of gallium arsenide. The geometry proposed enables the fabrication of a diode with mesa of an arbitrary thickness to mitigate AC losses in the diode layered structure at terahertz frequencies of interest. For frequencies beyond 1 THz, it is also beneficial to use the geometry for the implementation of n-GaAs/n-InGaAs heterojunction Schottky diodes grown on InP substrate.
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Shurakov A, Prikhodko A, Mikhailov D, Belikov I, Kaurova N, Voronov B, et al. Efficiency of a microwave reflectometry for readout of a THz multipixel Schottky diode direct detector. In: J. Phys.: Conf. Ser. Vol 1695.; 2020. 012156.
Abstract: In this paper we report on the results of investigation of efficiency of a microwave reflectometry for readout of a terahertz multipixel Schottky diode direct detector. Decent capabilities of the microwave reflectometry readout were earlier justified by us for a hot electron bolometric direct detector. In case of a planar Schottky diode, we observed increase of an optical noise equivalent power by a factor of 2 compared to that measured within a conventional readout scheme. For implementation of a multipixel camera, a microwave reflectometer is to be used to readout each row of the camera, and the row switching is to be maintained by a CMOS analog multiplexer. The diodes within a row have to be equipped with filters to distribute the probing microwave signal properly. The simultaneous use of analog multiplexing and microwave reflectometry enables to reduce the camera response time by a factor of its number of columns.
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Titova NA, Baeva EM, Kardakova AI, Goltsman GN. Fabrication of NbN/SiNx:H/SiO2 membrane structures for study of heat conduction at low temperatures. In: J. Phys.: Conf. Ser. Vol 1695.; 2020. 012190.
Abstract: Here we report on the development of NbN/SiNx:H/SiO2-membrane structures for investigation of the thermal transport at low temperatures. Thin NbN films are known to be in the regime of a strong electron-phonon coupling, and one can assume that the phononic and electronic baths in the NbN are in local equilibrium. In such case, the cooling of the NbN-based devices strongly depends on acoustic matching to the substrate and substrate thermal characteristics. For the insulating membrane much thicker than the NbN film, our preliminary results demonstrate that the membrane serves as an additional channel for the thermal relaxation of the NbN sample. That implies a negligible role of thermal boundary resistance of the NbN-SiNx:H interface in comparison with the internal thermal resistance of the insulating membrane.
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