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Ozhegov, R. V.; Smirnov, A. V.; Vakhtomin, Yu. B.; Smirnov, K. V.; Divochiy, A. V.; Goltsman, G. N. |
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Title |
Ultrafast superconducting bolometer receivers for terahertz applications |
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Abstract |
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Year |
2009 |
Publication |
Proc. PIERS |
Abbreviated Journal |
Proc. PIERS |
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867 |
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Keywords |
HEB |
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Abstract |
The research by the group of Moscow State Pedagogical University into the hot-electron phenomena in thin superconducting films has led to the development of new types of detectors and their use both in fundamental and applied studies. In this paper, we present the results of testing the terahertz HEB receiver systems based on ultrathin (∼ 4 nm) NbN and MoRe detectors with a response time of 50 ps and 1 ns, respectively. We have developed three types of devices which differ in the way a terahertz signal is coupled to the detector and cover the following ranges: 0.3–3 THz, 0.1–30 THz and 25–70 THz. In the case of the receiving system optimized for 0.3–3 THz, the sensitive element (a strip of asuperconductor with planar dimensions of 0.2μm (length) by 1.7μm (width)) was integrated witha planar broadband log-spiral antenna. For additional focusing ofthe incident radiation a silicon hyperhemispherical lens was used. For the 0.1–30 THz receivingsystem, the sensitive element was patterned as parallel strips(2μm wide each) filling an area of 500×500μm2with a filling factor of 0.5. In the receivingsystem of this type we used direct coupling of the incident radiation to the sensitive element. Inthe 25–70 THz range (detector type 2/2a in Table 1) we used a square-shaped superconductingdetector with planar dimensions of 10×10μm2. Incident radiation was coupled to the detectorwith the use of a germanium hyperhemispherical lens.The response time of the above receiving systems is determined by the cooling rate of the hotelectrons in the film. That depends on the electron-phonon interaction time, which is less forultrathin NbN than in MoRe. |
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Moscow, Russia |
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The Electromagnetics Academy |
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777 Concord Avenue, Suite 207 Cambridge, MA 02138 |
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1559-9450 |
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978-1-934142-09-7 |
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RPLAB @ sasha @ ozhegovultrafast |
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1022 |
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Smirnov, K. V.; Vakhtomin, Yu. B.; Divochiy, A. V.; Ozhegov, R. V.; Pentin, I. V.; Gol'tsman, G. N. |
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Title |
Infrared and terahertz detectors on basis of superconducting nanostructures |
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Conference Article |
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Year |
2010 |
Publication |
Microwave and Telecom. Technol. (CriMiCo), 20th Int. Crimean Conf. |
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823-824 |
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Keywords |
SSPD, SNSPD, HEB |
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Results of development of single-photon receiving systems of visible, infrared and terahertz range based on thin-film superconducting nanostructures are presented. The receiving systems are produced on the basis of superconducting nanostructures, which function by means of hot-electron phenomena. |
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IEEE |
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RPLAB @ sasha @ smirnov2010infrared |
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1025 |
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Goltsman, G. N.; Korneev, A. A.; Finkel, M. I.; Divochiy, A. V.; Florya, I. N.; Korneeva, Y. P.; Tarkhov, M. A.; Ryabchun, S. A.; Tretyakov, I. V.; Maslennikov, S. N.; Kaurova, N. S.; Chulkova, G. M.; Voronov, B. M. |
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Superconducting hot-electron bolometer as THz mixer, direct detector and IR single-photon counter |
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2010 |
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35th Int. Conf. Infrared, Millimeter, and Terahertz Waves |
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1-1 |
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SSPD, SNSPD, HEB |
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We present a new generation of superconducting single-photon detectors (SSPDs) and hot-electron superconducting sensors with record characteristic for many terahertz and optical applications. |
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2162-2027 |
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RPLAB @ sasha @ goltsman2010superconducting |
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1028 |
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Смирнов, Константин Владимирович; Вахтомин, Юрий Борисович; Смирнов, Андрей Владимирович; Ожегов, Роман Викторович; Пентин, Иван Викторович; Дивочий, Александр Валерьевич; Сливинская, Елизавета Вячеславовна; Гольцман, Григорий Наумович |
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Приемники терагерцового и инфракрасного диапазонов, основанные на тонкопленочных сверхпроводниковых наноструктурах |
Type |
Journal Article |
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2010 |
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Вестник НГУ. Серия: Физика |
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Вестник НГУ. Серия: Физика |
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5 |
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4 |
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HEB, SSPD, SNSPD |
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В работе представлены результаты разработки и создания чувствительных и ультрабыстрых приемников, основанных на тонкопленочных сверхпроводниковых наноструктурах: болометрах на эффекте электронного разогрева (HEB – hot-electron bolometer) и детекторах одиночных фотонов видимого и инфракрасного диапазонов волн (SSPD – superconducting singe-photon detector). Представлены основные принципы работы сверхпроводниковых устройств, технология создания и конструкционные особенности приемников, их основные типы и характеристики. Достигнутые рекордные значения параметров приемных систем позволяют использовать созданные приборы при решении различных научно-исследовательских задач в ближнем, среднем и дальнем ИК диапазонах волн.
This work presents the results of the development and fabrication of sensitive and ultrafast detectorsbased on thin film superconducting nanostructures: hot-electron bolometers (HEBs) and visible and infrared superconducting singe photon detectors (SSPDs). The main operational principles of the superconducting devices are presentedas well as the technology of fabrication of the detectors and their main types and parameters. The achieved record parameters of the detectors allow application of the fabricated devices to solution of various research problems in the near, middle and far IR ranges. |
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Новосибирский государственный университет |
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Russian |
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Физика |
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1818-7994 |
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УДК 538.9 |
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RPLAB @ sasha @ смирнов2010приемники |
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1033 |
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Author |
Skalare, A.; McGrath, William R.; Echternach, P. M.; Leduc, H. G.; Siddiqi, I.; Verevkin, A.; Prober, D. E. |
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Title |
Aluminum hot-electron bolometer mixers at submillimeter wavelengths |
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Journal Article |
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2001 |
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IEEE Trans. Appl. Supercond. |
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11 |
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1 |
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641-644 |
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Al HEB mixer, contacts, interface, in situ, in-situ, Aluminium HEB mixer |
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Diffusion-cooled aluminum hot-electron bolometer (HEB) mixers are of interest for low-noise high resolution THz-frequency spectroscopy within astrophysics. Al HEB mixers offer operation with an order of magnitude less local oscillator power, higher intermediate frequency bandwidth and potentially lower noise than competing devices made from other materials. We report on mixer experiments at 618 GHz with devices fabricated from films with sheet resistances in the range from about 55 Ω down to about 9 Ω per square. Intermediate frequency bandwidths of up to 3 GHz were measured (1 μm long device), with absorbed local oscillator power levels of 0.5 to 6 nW and mixer conversion up to -21.5 dB. High input coupling efficiency implies that the electrons in the device are able to thermalize before escaping from the device. It was found that the long coherence length complicates mixer operations due to the proximity of the contact pads. Also, saturation at the IF frequency may be a concern for this type of device, and warrants further studies. |
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1051-8223 |
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ref919426b |
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1061 |
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