Seleznev VA, Tarkhov MA, Voronov BM, Milostnaya II, Lyakhno VY, Garbuz AS, et al. Deposition and characterization of few-nanometers-thick superconducting Mo-Re films. Supercond Sci Technol. 2008;21(11):115006 (1 to 6).
Abstract: We report on the fabrication and investigation of few-nanometers-thick superconducting molybdenum-rhenium (Mo-Re) films intended for use in nanowire single-photon superconducting detectors (SSPDs). Mo-Re films were deposited on sapphire substrates by DC magnetron sputtering of an Mo(60)-Re(40) alloy target in an atmosphere of argon. The films 2-10 nm thick had critical temperatures (Tc) from 5.6 to 9.7 K. HRTEM (high-resolution transmission electron microscopy) analysis showed that the films had a homogeneous structure. XPS (x-ray photoelectron spectroscopy) analysis showed the Mo to Re atom ratio to be 0.575/0.425, oxygen concentration to be 10%, and concentration of other elements to be 1%.
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Zolotov PI, Divochiy AV, Vakhtomin YB, Morozov PV, Seleznev VA, Smirnov KV. Development of high-effective superconducting single-photon detectors aimed for mid-IR spectrum range. In: J. Phys.: Conf. Ser. Vol 917.; 2017. 062037.
Abstract: We report on development of superconducting single-photon detectors (SSPD) with high intrinsic quantum efficiency in the wavelength range 1.31 – 3.3 μm. By optimization of the NbN film thickness and its compound, we managed to improve detection efficiency of the detectors in the range up to 3.3 μm. Optimized devices showed intrinsic quantum efficiencies as high as 10% at mid-IR range.
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Ryabchun SA, Tretyakov IV, Finkel MI, Maslennikov SN, Kaurova NS, Seleznev VA, et al. Fabrication and characterisation of NbN HEB mixers with in situ gold contacts. In: Proc. 19th Int. Symp. Space Terahertz Technol. Groningen, Netherlands; 2008. p. 62–7.
Abstract: We present our recent results of the fabrication and testing of NbN hot-electron bolometer mixers with in situ gold contacts. An intermediate frequency bandwidth of about 6 GHz has been measured for the mixers made of a 3.5-nm NbN film on a plane Si substrate with in situ gold contacts, compared to 3.5 GHz for devices made of the same film with ex situ gold contacts. The increase in the intermediate frequency bandwidth is attributed to additional diffusion cooling through the improved contacts, which is further supported by the its dependence on the bridge length: intermediate frequency bandwidths of 3.5 GHz and 6 GHz have been measured for devices with lengths of 0.35 μm and 0.16 μm respectively at a local oscillator frequency of 300 GHz near the superconducting transition. At a local oscillator frequency of 2.5 THz the receiver has offered a DSB noise temperature of 950 K. When compared to the previous result of 1300 K obtained at the same local oscillator frequency for devices fabricated with an ex situ route, such a low value of the noise temperature may also be attributed to the improved gold contacts.
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Finkel MI, Maslennikov SN, Vachtomin YB, Svechnikov SI, Smirnov KV, Seleznev VA, et al. Hot electron bolometer mixer for 20 – 40 THz frequency range. In: Proc. 16th Int. Symp. Space Terahertz Technol. Göteborg, Sweden; 2005. p. 393–7.
Abstract: The developed HEB mixer was based on a 5 nm thick NbN film deposited on a GaAs substrate. The active area of the film was patterned as a 30×20 μm 2 strip and coupled with a 50 Ohm coplanar line deposited in situ. An extended hemispherical germanium lens was used to focus the LO radiation on the mixer. The responsivity of the mixer was measured in a direct detection mode in the 25÷64 THz frequency range. The noise performance of the mixer and the directivity of the receiver were investigated in a heterodyne mode. A 10.6 μm wavelength CW CO 2 laser was utilized as a local oscillator.
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Antipov AV, Seleznev VA, Vakhtomin YB, Morozov PV, Vasilev DD, Malevannaya EI, et al. Investigation of WSi and NbN superconducting single-photon detectors in mid-IR range. In: IOP Conf. Ser.: Mater. Sci. Eng. Vol 781.; 2020. 012011 (1 to 5).
Abstract: Spectral characteristics of WSi and NbN superconducting single-photon detectors with different surface resistance and width of nanowire strips have been investigated in the wavelength range of 1.3-2.5 μm. WSi structures with narrower strips demonstrated better performance for detection of single photons in longer wavelength range. The difference in normalized photon count rate for such structures reaches one order of magnitude higher in comparison with structures based on NbN thin films at 2.5 μm.
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