|
Records |
Links |
|
Author |
Смирнов, К. В. |
![find record details (via OpenURL) openurl](img/xref.gif)
|
|
Title ![sorted by Title field, ascending order (up)](img/sort_asc.gif) |
AlGaAs/GaAs смеситель на эффекте разогрева двумерных электронов для тепловизора субмиллиметрового диапазона |
Type |
Abstract |
|
Year |
2003 |
Publication |
Тезисы докладов VI Российской конференции по физике полупроводников |
Abbreviated Journal |
|
|
|
Volume |
|
Issue |
|
Pages |
181 |
|
|
Keywords |
2DEG, AlGaAs/GaAs heterostructures, mixer |
|
|
Abstract |
|
|
|
Address |
ФТИ им. А. Ф. Иоффе, Санк-Петербург |
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
VI Российской конференции по физике полупроводников (27-31 октября) |
|
|
Notes |
Unconfirmed; Сама конференция, однако, была -- её упоминают: [http://www.nsc.ru/HBC/article.phtml?nid=271&id=17], [https://www.isp.nsc.ru/institut/nauchnye-podrazdeleniya/lab-20/publikatsii/2003], [http://www.ioffe.ru/sem_tech/sem%5Fteh%5Fmovpe%5Fpublications%5Fru.htm#R2003], [https://istina.ips.ac.ru/collections/828771/] |
Approved |
no |
|
|
Call Number |
|
Serial |
1837 |
|
Permanent link to this record |
|
|
|
|
Author |
Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'Tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
![goto web page (via DOI) doi](img/doi.gif)
|
|
Title ![sorted by Title field, ascending order (up)](img/sort_asc.gif) |
Determination of the limiting mobility of a two-dimensional electron gas in AlxGa1-xAs/GaAs heterostructures and direct measurement of the energy relaxation time |
Type |
Journal Article |
|
Year |
1996 |
Publication |
Phys. Rev. B Condens. Matter. |
Abbreviated Journal |
Phys. Rev. B Condens. Matter. |
|
|
Volume |
53 |
Issue |
12 |
Pages |
R7592-R7595 |
|
|
Keywords |
2DEG, AlGaAs/GaAs heterostructures |
|
|
Abstract |
We present results for a method to measure directly the energy relaxation time (τe) for electrons in a single AlxGa1−xAs/GaAs heterojunction; measurements were performed from 1.6 to 15 K under quasiequilibrium conditions. We find τeαT−1 below 4 K, and τe independent of T above 4 K. We have also measured the energy-loss rate, ⟨Q⟩, by the Shubnikov-de Haas technique, and find ⟨Q⟩α(T3e−T3) for T<~4.2 K; Te is the electron temperature. The values and temperature dependence of τe and ⟨Q⟩ for T<4 K agree with calculations based on piezoelectric and deformation potential acoustic phonon scattering. At 4.2 K, we can also estimate the momentum relaxation time, τm, from our measured τe. This leads to a preliminary estimate of the phonon-limited mobility at 4.2 K of μ=3×107 cm2/Vs (ns=4.2×1011 cm−2), which agrees well with published numerical calculations, as well as with an earlier indirect estimate based on measurements on a sample with much higher mobility. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0163-1829 |
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
PMID:9982274 |
Approved |
no |
|
|
Call Number |
|
Serial |
1612 |
|
Permanent link to this record |
|
|
|
|
Author |
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Goltsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. |
![find record details (via OpenURL) openurl](img/xref.gif)
|
|
Title ![sorted by Title field, ascending order (up)](img/sort_asc.gif) |
Direct measurements of electron energy relaxation times at an AlGaAs/GaAs heterointerface in the optical phonon scattering range |
Type |
Conference Article |
|
Year |
1997 |
Publication |
Proc. 4-th Int. Semicond. Device Research Symp. |
Abbreviated Journal |
Proc. 4-th Int. Semicond. Device Research Symp. |
|
|
Volume |
|
Issue |
|
Pages |
55-58 |
|
|
Keywords |
2DEG, AlGaAs/GaAs heterostructures |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1602 |
|
Permanent link to this record |
|
|
|
|
Author |
Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
![goto web page (via DOI) doi](img/doi.gif)
|
|
Title ![sorted by Title field, ascending order (up)](img/sort_asc.gif) |
Direct measurements of energy relaxation time of electrons in AlGaAs/GaAs heterostructures under quasi-equilibrium conditions |
Type |
Journal Article |
|
Year |
1996 |
Publication |
Surface Science |
Abbreviated Journal |
Surface Science |
|
|
Volume |
361-362 |
Issue |
|
Pages |
569-573 |
|
|
Keywords |
2DEG, AlGaAs/GaAs heterostructures |
|
|
Abstract |
For the first time, results are presented of a direct measurement of the energy relaxation time τε of 2D electrons in an AlGaAs/GaAs heterojunction at T = 1 and 5–20 K. A weak temperature dependence of τε for the T > 4K range and a linear temperature dependence of the reciprocal of τε for T < 4K have been observed. The linear dependence τε−1 ≈ T in the Bloch-Gruneisen regime is direct evidence of the predominance of the piezo-electric mechanism of electron-phonon interaction in non-elastic electron scattering processes. The values of τε in this regime are in very good agreement with the results of the Karpus theory. At higher temperatures, where the deformation-potential scattering becomes noticeable, a substantial disagreement between the experimental data and the theoretical results is observed. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0039-6028 |
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1609 |
|
Permanent link to this record |
|
|
|
|
Author |
Verevkin, A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Chulkova, G. M.; Smirnov, K. S.; Sobolewski, R. |
![find record details (via OpenURL) openurl](img/xref.gif)
|
|
Title ![sorted by Title field, ascending order (up)](img/sort_asc.gif) |
Direct measurements of energy relaxation times in two-dimensional structures under quasi-equilibrium conditions |
Type |
Conference Article |
|
Year |
2002 |
Publication |
Mater. Sci. Forum |
Abbreviated Journal |
Mater. Sci. Forum |
|
|
Volume |
384-3 |
Issue |
|
Pages |
107-116 |
|
|
Keywords |
2DEG, AlGaAs/GaAs |
|
|
Abstract |
A new microwave technique was successfully applied for direct studies of energy relaxation times in two-dimensional AlGaAs/GaAs structures under quasi-equilibrium conditions in the nanosecond and picosecond time scale. We report our results of energy relaxation time measurements in the temperature range 1.6-50 K, in quantum Hall effect regime in magnetic fields up to 4 T. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
Materials Science Forum |
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1536 |
|
Permanent link to this record |