Author |
Title ![sorted by Title field, ascending order (up)](img/sort_asc.gif) |
Year |
Publication |
Volume |
Pages |
Kawamura, J.; Tong, C.-Y. E.; Blundell, R.; Papa, D. C.; Hunter, T. R.; Patt, F.; Gol’tsman, G.; Gershenzon, E. |
Terahertz-frequency waveguide NbN hot-electron bolometer mixer |
2001 |
IEEE Trans. Appl. Supercond. |
11 |
952-954 |
Vakhtomin, Y. B.; Finkel, M. I.; Antipov, S. V.; Smirnov, K. V.; Kaurova, N. S.; Drakinskii, V. N.; Voronov, B. M.; Gol’tsman, G. N. |
The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer |
2003 |
J. of communications technol. & electronics |
48 |
671-675 |
Gol’tsman, G. N. |
The “Millimetron” project, a future space telescope mission |
2007 |
Proc. 18th Int. Symp. Space Terahertz Technol. |
|
255 |
Sergeev, A. V.; Aksaev, E. E.; Gogidze, I. G.; Gol’tsman, G. N.; Semenov, A. D.; Gershenzon, E. M. |
Thermal boundary resistance at YBaCuO film-substrate interface |
1993 |
Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences |
112 |
405-406 |
Shurakov, A.; Mikhalev, P.; Mikhailov, D.; Mityashkin, V.; Tretyakov, I.; Kardakova, A.; Belikov, I.; Kaurova, N.; Voronov, B.; Vasil’evskii, I.; Gol’tsman, G. |
Ti/Au/n-GaAs planar Schottky diode with a moderately Si-doped matching sublayer |
2018 |
Microelectronic Engineering |
195 |
26-31 |