Records |
Author |
Zhang, J.; Słysz, W.; Pearlman, A.; Verevkin, A.; Sobolewski, R.; Okunev, O.; Chulkova, G.; Gol’tsman, G. N. |
Title ![sorted by Title field, ascending order (up)](img/sort_asc.gif) |
Time delay of resistive-state formation in superconducting stripes excited by single optical photons |
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Journal Article |
Year |
2003 |
Publication |
Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
Volume |
67 |
Issue |
13 |
Pages |
132508 (1 to 4) |
Keywords |
NbN SSPD, SNSPD |
Abstract |
We have observed a 65(±5)-ps time delay in the onset of a resistive-state formation in 10-nm-thick, 130-nm-wide NbN superconducting stripes exposed to single photons. The delay in the photoresponse decreased to zero when the stripe was irradiated by multi-photon (classical) optical pulses. Our NbN structures were kept at 4.2 K, well below the material’s critical temperature, and were illuminated by 100-fs-wide optical pulses. The time-delay phenomenon has been explained within the framework of a model based on photon-induced generation of a hotspot in the superconducting stripe and subsequent, supercurrent-assisted, resistive-state formation across the entire stripe cross section. The measured time delays in both the single-photon and two-photon detection regimes agree well with theoretical predictions of the resistive-state dynamics in one-dimensional superconducting stripes. |
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0163-1829 |
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1519 |
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Hübers, H.-W.; Semenov, A.; Holldack, K.; Schade, U.; Wüstefeld, G.; Gol’tsman, G. |
Title ![sorted by Title field, ascending order (up)](img/sort_asc.gif) |
Time domain analysis of coherent terahertz synchrotron radiation |
Type |
Journal Article |
Year |
2005 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
Volume |
87 |
Issue |
18 |
Pages |
184103 (1 to 3) |
Keywords |
NbN HEB mixers, applications |
Abstract |
The time structure of coherent terahertz synchrotron radiation at the electron storage ring of the Berliner Elektronensynchrotron und Speicherring Gesellschaft has been analyzed with a fast superconducting hot-electron bolometer. The emission from a single bunch of electrons was found to last ∼1500ps at frequencies around 0.4THz, which is much longer than the length of an electron bunch in the time domain (∼5ps). It is suggested that this is caused by multiple reflections at the walls of the beam line. The quadratic increase of the power with the number of electrons in the bunch as predicted for coherent synchrotron radiation and the transition from stable to bursting radiation were determined from a single storage ring fill pattern of bunches with different populations. |
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0003-6951 |
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1457 |
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Zhang, J.; Verevkin, A.; Slysz, W.; Chulkova, G.; Korneev, A.; Lipatov, A.; Okunev, O.; Gol’tsman, G. N.; Sobolewski, Roman |
Title ![sorted by Title field, ascending order (up)](img/sort_asc.gif) |
Time-resolved characterization of NbN superconducting single-photon optical detectors |
Type |
Conference Article |
Year |
2017 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
Volume |
10313 |
Issue |
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Pages |
103130F (1 to 3) |
Keywords |
NbN SSPD, SNSPD |
Abstract |
NbN superconducting single-photon detectors (SSPDs) are very promising devices for their picosecond response time, high intrinsic quantum efficiency, and high signal-to-noise ratio within the radiation wavelength from ultraviolet to near infrared (0.4 gm to 3 gm) [1-3]. The single photon counting property of NbN SSPDs have been investigated thoroughly and a model of hotspot formation has been introduced to explain the physics of the photon- counting mechanism [4-6]. At high incident flux density (many-photon pulses), there are, of course, a large number of hotspots simultaneously formed in the superconducting stripe. If these hotspots overlap with each other across the width w of the stripe, a resistive barrier is formed instantly and a voltage signal can be generated. We assume here that the stripe thickness d is less than the electron diffusion length, so the hotspot region can be considered uniform. On the other hand, when the photon flux is so low that on average only one hotspot is formed across w at a given time, the formation of the resistive barrier will be realized only when the supercurrent at sidewalks surpasses the critical current (jr) of the superconducting stripe [1]. In the latter situation, the formation of the resistive barrier is associated with the phase-slip center (PSC) development. The effect of PSCs on the suppression of superconductivity in nanowires has been discussed very recently [8, 9] and is the subject of great interest. |
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SPIE |
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Armitage, J. C. |
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Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging, 2002, Ottawa, Ontario, Canada |
Notes |
Downloaded from http://www2.ece.rochester.edu/projects/ufqp/PDF/2002/213NbNTimeOPTO_b.pdf This artcle was published in 2017 with only first author indicated (Zhang, J.). There were 8 more authors! |
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1750 |
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Elvira, D.; Michon, A.; Fain, B.; Patriarche, G.; Beaudoin, G.; Robert-Philip, I.; Vachtomin, Y.; Divochiy, A. V.; Smirnov, K. V.; Gol’tsman, G. N.; Sagnes, I.; Beveratos, A. |
Title ![sorted by Title field, ascending order (up)](img/sort_asc.gif) |
Time-resolved spectroscopy of InAsP/InP(001) quantum dots emitting near 2 μm |
Type |
Journal Article |
Year |
2010 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
Volume |
97 |
Issue |
13 |
Pages |
131907 (1 to 3) |
Keywords |
SSPD, SNSPD, InAsP/InP quantum dots |
Abstract |
By using superconducting single photon detectors, we perform time-resolved characterization of a small ensemble of InAsP/InP quantum dots grown by metal organic vapor phase epitaxy, emitting at wavelengths between 1.6 and 2.2 μm. We demonstrate that alloying phosphorus with InAs allows to shift the emission wavelength toward higher wavelengths, while keeping the high optical quality of these quantum dots at room temperature, with no decrease in their radiative lifetime. This work was partially supported by Russian Ministry of Science and Education: Federal State Program “Scientific and Educational Cadres of Innovative” state Contract Nos. 02.740.0228, 14.740.11.0343, 14.740.11.0269, and P931, and RFBR Project No. 09-02-12364. |
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0003-6951 |
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1238 |
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Lindgren, M.; Trifonov, V.; Zorin, M.; Danerud, M.; Winkler, D.; Karasik, B. S.; Gol’tsman, G. N.; Gershenzon, E.M. |
Title ![sorted by Title field, ascending order (up)](img/sort_asc.gif) |
Transient resistive photoresponse of YBa2Cu3O7−δ films using low power 0.8 and 10.6 μm laser radiation |
Type |
Journal Article |
Year |
1994 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
Volume |
64 |
Issue |
22 |
Pages |
3036-3038 |
Keywords |
YBCO HTS HEB, nonequilibrium |
Abstract |
Thin YBa2Cu3O7−δ laser deposited films were patterned into devices consisting of ten parallel 1 μm wide strips. Nonequilibrium picosecond and bolometric photoresponses were studied by the use of 17 ps full width at half‐maximum laser pulses and amplitude modulated radiation from an AlGaAs laser up to 10 GHz and from a CO2 laser up to 1 GHz. The time and frequency domain measurements were in agreement. The fast response can be explained by electron heating. The use of low optical power and a sensitive measurement system excluded any nonlinear transient processes and kinetic inductance changes in the superconducting state. At 1 GHz modulation frequency, the responsivity was ∼1.2 V/W both for 0.8 and 10.6 μm wavelengths. The sensitivity of a fast and spectrally broadband infrared detector is discussed. |
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0003-6951 |
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1639 |
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