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Hajenius, M.; Baselmans, J. J. A.; Gao, J. R.; Klapwijk, T. M.; de Korte, P. A. J.; Voronov, B.; Gol'tsman, G. |
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Title ![sorted by Title field, ascending order (up)](img/sort_asc.gif) |
Low noise NbN superconducting hot electron bolometer mixers at 1.9 and 2.5 THz |
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2004 |
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Supercond. Sci. Technol. |
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Supercond. Sci. Technol. |
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17 |
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5 |
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S224-S228 |
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NbN HEB mixers |
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NbN phonon-cooled hot electron bolometer mixers (HEBs) have been realized with negligible contact resistance between the bolometer itself and the contact structure. Using a combination of in situ cleaning of the NbN film and the use of an additional superconducting interlayer of a 10 nm NbTiN layer between the Au of the contact structure and the NbN film superior noise temperatures have been obtained as low as 950 K at 2.5 THz and 750 K at 1.9 THz. Here we address in detail the DC characterization of these devices, the interface transparencies between the bolometers and the contacts and the consequences of these factors on the mixer performance. |
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0953-2048 |
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Yngvesson, K. S.; Gerecht, E.; Musante, C. F.; Zhuang, Y.; Ji, M.; Goyette, T. M.; Dickinson, J. C.; Waldman, J.; Yagoubov, P. A.; Gol’tsman, G. N.; Voronov, B. M.; Gershenzon, E. M. |
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Title ![sorted by Title field, ascending order (up)](img/sort_asc.gif) |
Low-noise HEB heterodyne receivers and focal plane arrays for the THz regime using NbN |
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Conference Article |
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1999 |
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Proc. SPIE |
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Proc. SPIE |
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3795 |
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357-368 |
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NbN HEB mixers |
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We have developed prototype HEB receivers using thin film superconducting NbN devices deposited on silicon substrates. The devices are quasi-optically coupled through a silicon lens and a self-complementary log-specific toothed antenna. We measured DSB receiver noise temperatures of 500 K (13 X hf/2k) at 1.56 THz and 1,100 K (20 X hf/2k) at 2.24 THz. Noise temperatures are expected to fall further as devices and quasi-optical coupling methods are being optimized. The measured 3 dB IF conversion gain bandwidth for one device was 3 GHz, and it is estimated that the bandwidth over which the receiver noise temperature is within 3 dB of its minimum value is 6.5 GHz which is sufficient for a number of practical applications. We will discuss our latest results and give a detailed description of our prototype setup and experiments. We will also discuss our plans for developing focal plane arrays with tens of Hot Electron Bolometric mixer elements on a single silicon substrate which will make real time imaging systems in the THz region feasible. |
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SPIE |
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Hwu, R.J.; Wu, K. |
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Terahertz and Gigahertz Photonics |
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1561 |
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Goltsman, Gregory N.; Vachtomin, Yuriy B.; Antipov, Sergey V.; Finkel, Matvey I.; Maslennikov, Sergey N.; Polyakov, Stanislav L.; Svechnikov, Sergey I.; Kaurova, Natalia S.; Grishina, Elisaveta V.; Voronov, Boris M. |
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Title ![sorted by Title field, ascending order (up)](img/sort_asc.gif) |
Low-noise NbN phonon-cooled hot-electron bolometer mixers for terahertz heterodyne receivers |
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Conference Article |
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2005 |
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Proc. 9-th WMSCI |
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Proc. 9-th WMSCI |
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9 |
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154-159 |
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NbN HEB mixers |
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International Institute of Informatics and Systemics |
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547 |
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Ryabchun, S. A.; Tretyakov, I. V.; Pentin, I. V.; Kaurova, N. S.; Seleznev, V. A.; Voronov, B. M.; Finkel, M. I.; Maslennikov, S. N.; Gol'tsman, G. N. |
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Title ![sorted by Title field, ascending order (up)](img/sort_asc.gif) |
Low-noise wide-band hot-electron bolometer mixer based on an NbN film |
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2009 |
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Radiophys. Quant. Electron. |
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52 |
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8 |
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576-582 |
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HEB mixer, in-situ contacts, noise temperature, conversion gain bandwidth, diffusion cooling channel |
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We develop and study a hot-electron bolometer mixer made of a two-layer NbN–Au film in situ deposited on a silicon substrate. The double-sideband noise temperature of the mixer is 750 K at a frequency of 2.5 THz. The conversion efficiency measurements show that at the superconducting transition temperature, the intermediate-frequency bandwidth amounts to about 6.5 GHz for a mixer 0.112 μm long. These record-breaking characteristics are attributed to the improved contacts between a sensitive element and a helical antenna and are reached due to using the in situ deposition of NbN and Au layers at certain stages of the process. |
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599 |
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Gerecht, E.; Musante, C. F.; Jian, H.; Yngvesson, K. S.; Dickinson, J.; Waldman, J.; Gol'tsman, G. N.; Yagoubov, P. A.; Voronov, B. M.; Gershenzon, E. M. |
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Title ![sorted by Title field, ascending order (up)](img/sort_asc.gif) |
Measured results for NbN phonon-cooled hot electron bolometric mixers at 0.6-0.75 THz, 1.56 THz, and 2.5 THz |
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Conference Article |
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1998 |
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Proc. 9th Int. Symp. Space Terahertz Technol. |
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Proc. 9th Int. Symp. Space Terahertz Technol. |
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105-114 |
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NbN HEB mixers |
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