Cherednichenko S, Drakinskiy V, Baubert J, Lecomte B, Dauplay F, Krieg J-M, et al. 2.5 THz multipixel heterodyne receiver based on NbN HEB mixers [abstract]. In: Proc. 18th Int. Symp. Space Terahertz Technol.; 2007. 112.
Abstract: A 16 pixel heterodyne receiver for 2.5 THz has been developed based on NbN superconducting hot-electron bolometer (HEB) mixers. The receiver uses a quasioptical RF coupling approach where HEB mixers are integrated into double dipole antennas on 1.5μm thick Si3N4 / SiO2 membranes. Spherical mirrors (one per pixel) and backshort distance from the antenna have been used to design the output mixer beam profile. The camera design allows all 16 pixel IF readout in parallel. Measurements of the mixers sensitivity and the input RF band are presented, and compared against calculations.
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Svechnikov SI, Okunev OV, Yagoubov PA, Gol'tsman GN, Voronov BM, Cherednichenko SI, et al. 2.5 THz NbN hot electron mixer with integrated tapered slot antenna. IEEE Trans Appl Supercond. 1997;7(2):3548–51.
Abstract: A Hot Electron Bolometer (HEB) mixer for 2.5 THz utilizing a NbN thin film device, integrated with a Broken Linearly Tapered Slot Antenna (BLTSA), has been fabricated and is presently being tested. The NbN HEB device and the antenna were fabricated on a SiO2membrane. A 0.5 micrometer thick SiO2layer was grown by rf magnetron reactive sputtering on a GaAs wafer. The HEB device (phonon-cooled type) was produced as several parallel strips, 1 micrometer wide, from an ultrathin NbN film 4-7 nm thick, that was deposited onto the SiO2layer by dc magnetron reactive sputtering. The BLTSA was photoetched in a multilayer Ti-Au metallization. In order to strengthen the membrane, the front-side of the wafer was coated with a 5 micrometer thick polyimide layer just before the membrane formation. The last operation was anisotropic etching of the GaAs in a mixture of HNO3and H2O2.
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Ekström H, Karasik B, Kollberg E, Gol'tsman G, Gershenzon E. 350 GHz NbN hot electron bolometer mixer. In: Proc. 6th Int. Symp. Space Terahertz Technol.; 1995. p. 269–83.
Abstract: Superconducting NbN hot-electron bolometer (HEB) mixer devices have been fabricated and measured at 350 GHz. The HEB is integrated with a double dipole antenna on an extended crystalline quartz hyper hemispherical substrate lens. Heterodyne measurement gave a -3 dB bandwidth, mainly determined by the electron- phonon interaction time, of about 680 and 1000 MHz for two different films with Tc = 8.5 and 11 K respectively. The measured DSB receiver noise temperature is around 3000 K at 800 MHz IF frequency. The main contribution to the output noise from the device is due to electron temperature fluctuations with the equivalent output noise temperature TFL-100 K. TH, has the same frequency dependence as the IF response. The contribution from Johnson noise is of the order of T. The RF coupling loss is estimated to be = 6 dB. The film with lower Tc, had an estimated intrinsic low-frequency conversion loss = 7 dB, while the other film had a conversion loss as high as 14 dB. The difference in intrinsic conversion loss is explained by less uniform absorption of radiation. Measurements of the small signal impedance shows a transition of the output impedance from the DC differential resistance Rd=dV/dI in the low frequency limit to the DC resistance R 0 =Uoff 0 in the bias point for frequencies above 3 GHz. We judge that the optimum shape of the IV-characteristic is more easily obtained at THz frequencies where the main restriction in performance should come from problems with the RF coupling.
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Meledin DV, Marrone DP, Tong C-YE, Gibson H, Blundell R, Paine SN, et al. A 1-THz superconducting hot-electron-bolometer receiver for astronomical observations. IEEE Trans Microwave Theory Techn. 2004;52(10):2338–43.
Abstract: In this paper, we describe a superconducting hot-electron-bolometer mixer receiver developed to operate in atmospheric windows between 800-1300 GHz. The receiver uses a waveguide mixer element made of 3-4-nm-thick NbN film deposited over crystalline quartz. This mixer yields double-sideband receiver noise temperatures of 1000 K at around 1.0 THz, and 1600 K at 1.26 THz, at an IF of 3.0 GHz. The receiver was successfully tested in the laboratory using a gas cell as a spectral line test source. It is now in use on the Smithsonian Astrophysical Observatory terahertz test telescope in northern Chile.
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Tong C-YE, Meledin D, Loudkov D, Blundell R, Erickson N, Kawamura J, et al. A 1.5 THz Hot-Electron Bolometer mixer operated by a planar diode based local oscillator. In: IEEE MTT-S Int. Microwave Symp. Digest. Vol 2.; 2003. p. 751–4.
Abstract: We have developed a 1.5 THz superconducting NbN Hot-Electron Bolometer mixer. It is operated by an all-solid-state Local Oscillator comprising of a cascade of 4 planar doublers following an MMIC based W-band power amplifier. The threshold available pump power is estimated to be 1 /spl mu/W.
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