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HgCdTe detectors technical data sheet |
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Miscellaneous |
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2006 |
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HgCdTe |
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RPLAB @ s @ |
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464 |
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Peyton, Bernard J.; Dinardo, Antony J.; Kanischak, Gerald M.; Arams, Frank R.; Lange, Donald A.; Sard, Eugene W. |
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High-sensitivity receiver for infrared laser communications |
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1972 |
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IEEE J. Quantum Electron. |
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QE-8 |
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2 |
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252-263 |
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HgCdTe |
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465 |
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Currie, N. C.; Demma, F. J.; Ferris Jr., D. D.; Kwasowsky, B. R.; McMillan, R. W.; Wicks, M. C. |
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Infrared and millimeter-wave sensors for military special operations and law enforcement applications |
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Journal Article |
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1996 |
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Int. J. Infrared and Millimeter Waves |
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17 |
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7 |
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1117-1138 |
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HgCdTe |
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0195-9271 |
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466 |
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Rogalski, A. |
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Material considerations for third generation photon detectors |
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2006 |
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HgCdTe, InAs/GaInSb, QWIP |
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RPLAB @ s @ |
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463 |
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Zhou, Y.D.; Becker, C. R.; Ashokan, R.; Selamet, Y.; Chang, Y.; Boreiko, R. T.; Betz, A. L.; Sivananthan, S. |
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Title ![sorted by Title field, ascending order (up)](img/sort_asc.gif) |
Progress in far-infrared detection technology |
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Conference Article |
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2002 |
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Proc. SPIE |
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4795 |
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121-128 |
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HgCdTe/CdTe, detector |
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Abstract |
II-VI intrinsic very long wavelength infrared (VLWIR, λc~20 to 50 μm) materials, HgCdTe alloys as well as HgCdTe/CdTe superlattices, were grown by molecular beam epitaxy (MBE). The layers were characterized by means of X-ray diffraction, conventional Fourier transform infrared spectroscopy, Hall effect measurements and transmittance electron microscopy (TEM). Photoconductor devices were processed and their spectral response was also measured to demonstrate their applicability in the VLWIR region. |
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Longshore, R. E.; Sivananthan, S. |
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Society of Photo-Optical Instrumentation Engineers (SPIE) Conference Series |
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471 |
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