|
|
Skocpol' WJ, Beasley MR, Tinkham M. Self-heating hotspots in superconducting thin film microbridges. J Appl Phys. 1974;45:4054–66.
Abstract: Heating effects in both long and short superconducting thin-<ef><ac><81>lm rnicrobridges are described and analyzed. Except near T(c), at low voltages where superconducting quantum processes occur, all of our experimental dc I-V characteristics can be satisfactorily understood on the basis of a simple model of a localized normal hotspot maintained by Joule heating. We consider approximations appropriate to the cases of long bridges, short bridges, and bridges coupled to microwave radiation. The analysis leads to analytic expressions for the I-V characteristics which agree well with the experimental data. We show that the formation of such a hotspot is the dominant cause of the hysteresis observed in the I-V characteristics at low temperatures. We also show that the growth of such a hotspot imposes a high-voltage limit on the ac Josephson effect in these devices, and we compare the importance of such heating effects at high voltages in various types of superconducting weak links.
|
|
|
|
Gayduchenko I, Kardakova A, Fedorov G, Voronov B, Finkel M, Jiménez D, et al. Response of asymmetric carbon nanotube network devices to sub-terahertz and terahertz radiation. J Appl Phys. 2015;118(19):194303.
Abstract: Demand for efficient terahertz radiation detectors resulted in intensive study of the asymmetric carbon nanostructures as a possible solution for that problem. It was maintained that photothermoelectric effect under certain conditions results in strong response of such devices to terahertz radiation even at room temperature. In this work, we investigate different mechanisms underlying the response of asymmetric carbon nanotube (CNT) based devices to sub-terahertz and terahertz radiation. Our structures are formed with CNT networks instead of individual CNTs so that effects probed are more generic and not caused by peculiarities of an individual nanoscale object. We conclude that the DC voltage response observed in our structures is not only thermal in origin. So called diode-type response caused by asymmetry of the device IV characteristic turns out to be dominant at room temperature. Quantitative analysis provides further routes for the optimization of the device configuration, which may result in appearance of novel terahertz radiation detectors.
|
|
|
|
Rasulova GK, Pentin IV, Vakhtomin YB, Smirnov KV, Khabibullin RA, Klimov EA, et al. Pulsed terahertz radiation from a double-barrier resonant tunneling diode biased into self-oscillation regime. J Appl Phys. 2020;128(22):224303 (1 to 11).
Abstract: The study of the bolometer response to terahertz (THz) radiation from a double-barrier resonant tunneling diode (RTD) biased into the negative differential conductivity region of the I–V characteristic revealed that the RTD emits two pulses in a period of intrinsic self-oscillations of current. The bolometer pulse repetition rate is a multiple of the fundamental frequency of the intrinsic self-oscillations of current. The bolometer pulses are detected at two critical points with a distance between them being half or one-third of a period of the current self-oscillations. An analysis of the current self-oscillations and the bolometer response has shown that the THz photon emission is excited when the tunneling electrons are trapped in (the first pulse) and then released from (the second pulse) miniband states.
|
|
|
|
Nebosis RS, Steinke R, Lang PT, Schatz W, Heusinger MA, Renk KF, et al. Picosecond YBa2Cu3O7−δdetector for far‐infrared radiation. J Appl Phys. 1992;72(11):5496–9.
Abstract: We report on a picosecond YBa2Cu3O7−δ detector for far‐infrared radiation. The detector, consisting of a current carrying structure cooled to liquid‐nitrogen temperature, was studied by use of ultrashort laser pulses from an optically pumped far‐infrared laser in the frequency range from 25 to 215 cm−1. We found that the sensitivity (1 mV/W) was almost constant in this frequency range. We estimated a noise equivalent power of less than 5×10−7 W Hz−1/2. Taking into account the results of a mixing experiment (in the frequency range from 4 to 30 cm−1) we suggest that the response time of the detector was few picoseconds.
|
|
|
|
Kawamura J, Blundell R, Tong C‐yu E, Gol’tsman G, Gershenzon E, Voronov B. Performance of NbN lattice‐cooled hot‐electron bolometric mixers. J Appl Phys. 1996;80(7):4232–4.
Abstract: The heterodyne performance of lattice‐cooled hot‐electron bolometric mixers is measured at 200 GHz. Superconducting thin‐film niobium nitride strips with ∼5 nm thickness are used as waveguide mixer elements. A double‐sideband receiver noise temperature of 750 K at 244 GHz is measured at an intermediate frequency centered at 1.5 GHz with 500 MHz bandwidth and with 4.2 K device temperature. The instantaneous bandwidth for this mixer is 1.6 GHz. The local oscillator power required by the mixer is about 0.5 μW. The mixer is linear to within 1 dB up to an input power level 6 dB below the local oscillator power. A receiver incorporating a hot‐electron bolometric mixer was used to detect molecular line emission in a laboratory gascell. This experiment unambiguously confirms that the receiver noise temperature determined from Y‐factor measurements reflects the true heterodyne sensitivity.
|
|
