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Pernice WHP, Schuck C, Minaeva O, Li M, Goltsman GN, Sergienko AV, et al. High-speed and high-efficiency travelling wave single-photon detectors embedded in nanophotonic circuits. Nat Commun. 2012;3:1325 (1 to 10).
Abstract: Ultrafast, high-efficiency single-photon detectors are among the most sought-after elements in modern quantum optics and quantum communication. However, imperfect modal matching and finite photon absorption rates have usually limited their maximum attainable detection efficiency. Here we demonstrate superconducting nanowire detectors atop nanophotonic waveguides, which enable a drastic increase of the absorption length for incoming photons. This allows us to achieve high on-chip single-photon detection efficiency up to 91% at telecom wavelengths, repeatable across several fabricated chips. We also observe remarkably low dark count rates without significant compromise of the on-chip detection efficiency. The detectors are fully embedded in scalable silicon photonic circuits and provide ultrashort timing jitter of 18 ps. Exploiting this high temporal resolution, we demonstrate ballistic photon transport in silicon ring resonators. Our direct implementation of a high-performance single-photon detector on chip overcomes a major barrier in integrated quantum photonics.
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Feautrier P, le Coarer E, Espiau de Lamaestre R, Cavalier P, Maingault L, Villégier J-C, et al. High-speed superconducting single photon detectors for innovative astronomical applications. In: J. Phys.: Conf. Ser. Vol 97.; 2008. 10.
Abstract: Superconducting Single Photon Detectors (SSPD) are now mature enough to provide extremely interesting detector performances in term of sensitivity, speed, and geometry in the visible and near infrared wavelengths. Taking advantage of recent results obtained in the Sinphonia project, the goal of our research is to demonstrate the feasibility of a new family of micro-spectrometers, called SWIFTS (Stationary Wave Integrated Fourier Transform Spectrometer), associated to an array of SSPD, the whole assembly being integrated on a monolithic sapphire substrate coupling the detectors array to a waveguide injecting the light. This unique association will create a major breakthrough in the domain of visible and infrared spectroscopy for all applications where the space and weight of the instrument is limited. SWIFTS is an innovative way to achieve very compact spectro-detectors using nano-detectors coupled to evanescent field of dielectric integrated optics. The system is sensitive to the interferogram inside the dielectric waveguide along the propagation path. Astronomical instruments will be the first application of such SSPD spectrometers. In this paper, we describes in details the fabrication process of our SSPD built at CEA/DRFMC using ultra-thin NbN epitaxial films deposited on different orientations of Sapphire substrates having state of the art superconducting characteristics. Electron beam lithography is routinely used for patterning the devices having line widths below 200 nm and down to 70 nm. An experimental set-up has been built and used to test these SSPD devices and evaluate their photon counting performances. Photon counting performances of our devices have been demonstrated with extremely low dark counts giving excellent signal to noise ratios. The extreme compactness of this concept is interesting for space spectroscopic applications. Some new astronomical applications of such concept are proposed in this paper.
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Semenov AD, Gol'tsman GN, Sobolewski R. Hot-electron effect in superconductors and its applications for radiation sensors. Supercond Sci Technol. 2002;15(4):R1–R16.
Abstract: The paper reviews the main aspects of nonequilibrium hot-electron phenomena in superconductors and various theoretical models developed to describe the hot-electron effect. We discuss implementation of the hot-electron avalanche mechanism in superconducting radiation sensors and present the most successful practical devices, such as terahertz mixers and direct intensity detectors, for far-infrared radiation. Our presentation also includes the novel approach to hot-electron quantum detection implemented in superconducting x-ray to optical photon counters.
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Ferrari S, Kovalyuk V, Hartmann W, Vetter A, Kahl O, Lee C, et al. Hot-spot relaxation time current dependence in niobium nitride waveguide-integrated superconducting nanowire single-photon detectors. Opt Express. 2017;25(8):8739–50.
Abstract: We investigate how the bias current affects the hot-spot relaxation dynamics in niobium nitride. We use for this purpose a near-infrared pump-probe technique on a waveguide-integrated superconducting nanowire single-photon detector driven in the two-photon regime. We observe a strong increase in the picosecond relaxation time for higher bias currents. A minimum relaxation time of (22 +/- 1)ps is obtained when applying a bias current of 50% of the switching current at 1.7 K bath temperature. We also propose a practical approach to accurately estimate the photon detection regimes based on the reconstruction of the measured detector tomography at different bias currents and for different illumination conditions.
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Driessen EFC, Braakman FR, Reiger EM, Dorenbos SN, Zwiller V, de Dood MJA. Impedance model for the polarization-dependent optical absorption of superconducting single-photon detectors. Eur. Phys. J. Appl. Phys.. 2009;47:10701.
Abstract: We measured the single-photon detection efficiency of NbN superconducting single-photon detectors as a function of the polarization state of the incident light for different wavelengths in the range from 488 nm to 1550 nm. The polarization contrast varies from ~% at 488 nm to~0% at 1550 nm, in good agreement with numerical calculations. We use an optical-impedance model to describe the absorption for polarization parallel to the wires of the detector. For the extremely lossy NbN material, the absorption can be kept constant by keeping the product of layer thickness and filling factor constant. As a consequence, the maximum possible absorption is independent of filling factor. By illuminating the detector through the substrate, an absorption efficiency of ~0% can be reached for a detector on Si or GaAs, without the need for an optical cavity.
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