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Semenov AD, Hübers H–W, Schubert J, Gol'tsman GN, Elantiev AI, Voronov BM, et al. Frequency dependent noise temperature of the lattice cooled hot-electron terahertz mixer. In: Proc. 11th Int. Symp. Space Terahertz Technol.; 2000. p. 39–48.
Abstract: We present the measurements and the theoretical model on the frequency dependent noise temperature of a lattice cooled hot electron bolometer (HEB) mixer in the terahertz frequency range. The experimentally observed increase of the noise temperature with frequency is a cumulative effect of the non-uniform distribution of the high frequency current in the bolometer and the charge imbalance, which occurs near the edges of the normal domain and contacts with normal metal. In addition, we present experimental results which show that the noise temperature of a HEB mixer can be reduced by about 30% due to a Parylene antireflection coating on the Silicon hyperhemispheric lens.
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Hajenius M, Baselmans JJA, Baryshev A, Gao JR, Klapwijk TM, Kooi JW, et al. Full characterization and analysis of a terahertz heterodyne receiver based on a NbN hot electron bolometer. J. Appl. Phys.. 2006;100(7):074507.
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Baselmans J, Kooi J, Baryshev A, Yang ZQ, Hajenius M, Gao JR, et al. Full characterization of small volume NbN HEB mixers for space applications. In: Proc. 16th Int. Symp. Space Terahertz Technol. Göteborg, Sweden; 2005. p. 457–62.
Abstract: NbN phonon cooled HEB’s are one of the most promising bolometer mixer technologies for (near) future (space) applications. Their performance is usually quantified by mea- suring the receiver noise temperature at a given IF frequency, usually around 1 – 2 GHz. However, for any real applications it is vital that one fully knows all the relevant properties of the mixer, including LO power, stability, direct detection, gain bandwidth and noise bandwidth, not only the noise temperature at low IF frequencies. To this aim we have measured all these parameters at the optimal operating point of one single, small volume quasioptical NbN HEB mixer. We find a minimum noise temperature of 900 K at 1.46 THz. We observe a direct detection effect indicated by a change in bias current when changing from a 300 K hot load to a 77 K cold load. Due to this effect we overestimate the noise temperature by about 22% using a 300 K hot load and a 77 K cold load. The LO power needed to reach the optimal operating point is 80 nW at the receiver lens front, 59 nW inside the NbN bridge. However, using the isothermal technique we find a power absorbed in the NbN bridge of 25 nW, a difference of about a factor 2. We obtain a gain bandwidth of 2.3 GHz and a noise bandwidth of 4 GHz. The system Allan time is about 1 sec. in a 50 MHz spectral bandwidth and a deviation from white noise integration (governed by the radiometer equation) occurs at 0.2 sec., which implies a maximum integration time of a few seconds in a 1 MHz bandwidth spectrometer.
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Ekstörm H, Kollberg E, Yagoubov P, Gol'tsman G, Gershenzon E, Yngvesson S. Gain and noise bandwidth of NbN hot-electron bolometric mixers. Appl Phys Lett. 1997;70(24):3296–8.
Abstract: We have measured the noise performance and gain bandwidth of 35 Å thin NbN hot-electron mixers integrated with spiral antennas on silicon substrate lenses at 620 GHz. The best double-sideband receiver noise temperature is less than 1300 K with a 3 dB bandwidth of ≈5 GHz. The gain bandwidth is 3.2 GHz. The mixer output noise dominated by thermal fluctuations is 50 K, and the intrinsic conversion gain is about −12 dB. Without mismatch losses and excluding the loss from the beamsplitter, we expect to achieve a receiver noise temperature of less than 700 K.
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Finkel M, Vachtomin Y, Antipov S, Drakinski V, Kaurova N, Voronov B, et al. Gain bandwidth and noise temperature of NbTiN HEB mixer. In: Proc. 14th Int. Symp. Space Terahertz Technol.; 2003. p. 276–85.
Abstract: We have determined that the gain bandwidth of phonon-cooled HEB mixer employing NbTiN films deposited on MgO layer over Si substrate is limited b y the escape of phonons to the substrate. The cut-off frequencies of 1 um long devices operating at T 71, based on 3.5 nm. 4 nm and 10 nm thick films amount to 400 Mk. 300 MHz, and 100 MHz, respectivel y . The gain bandwidth of 0.13 . um long devices fabricated from 3.5 nm thick film is larger and amounts to 0.8 GIL; at the optimal operating point and to 1.5 GIL: at larger bias. The increase of the gain bandwidth from 400 MHz up to 1.5 GH: with the change of bridge length is attributed to diffusion cooling. A double sideband noise temperature of 4000 K was obtained for heterodyne receiver utilizing pilot NbTiN HEB mixer (not optimized for normal state resistance) operating at the local oscillator frequency of 2.5 THz.
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