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Semenov, A. D.; Il'in, K.; Siegel, M.; Smirnov, A.; Pavlov, S.; Richter, H.; Hübers, H.-W. |
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Title |
Evidence of non-bolometric mixing in the bandwidth of a hot-electron bolometer |
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Journal Article |
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Year |
2006 |
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Superconductor Science and Technology |
Abbreviated Journal |
Supercond. Sci. Technol. |
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19 |
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10 |
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1051-1056 |
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Keywords |
HEB |
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0953-2048 |
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536 |
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Semenov, A. D.; Goghidze, I. G.; Gol’tsman, G. N.; Sergeev, A. V.; Gershenzon, E. M. |
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Title |
Evidence for the spectral dependence of nonequilibrium picosecond photoresponse of YBaCuO thin films |
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Journal Article |
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Year |
1993 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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63 |
Issue |
5 |
Pages |
681-683 |
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Keywords |
YBCO HTS detectors, nonequilibrium |
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The transient voltage photoresponse of current biased YBaCuO thin films to 20 ps laser pulses of 0.63 and 1.54 μm wavelengths is measured for temperatures around the superconducting transition region. The fast picosecond decay of the response is followed by a slow nanosecond relaxation which is associated with the bolometric effect. The magnitude of the fast component of the response varies in proportion to the square root of wavelength that plausibly reflects multiplication processes of photoexcited electrons via electron–electron scattering and interaction with high energy phonons. |
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0003-6951 |
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1655 |
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Author |
Klapwijk, T. M.; Semenov, A. V. |
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Title |
Engineering physics of superconducting hot-electron bolometer mixers |
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Journal Article |
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2017 |
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IEEE Trans. THz Sci. Technol. |
Abbreviated Journal |
IEEE Trans. THz Sci. Technol. |
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Volume |
7 |
Issue |
6 |
Pages |
627-648 |
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Keywords |
HEB mixers |
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Superconducting hot-electron bolometers are presently the best performing mixing devices for the frequency range beyond 1.2 THz, where good-quality superconductor-insulator-superconductor devices do not exist. Their physical appearance is very simple: an antenna consisting of a normal metal, sometimes a normal-metal-superconductor bilayer, connected to a thin film of a narrow short superconductor with a high resistivity in the normal state. The device is brought into an optimal operating regime by applying a dc current and a certain amount of local-oscillator power. Despite this technological simplicity, its operation has found to be controlled by many different aspects of superconductivity, all occurring simultaneously. A core ingredient is the understanding that there are two sources of resistance in a superconductor: a charge-conversion resistance occurring at a normal-metal-superconductor interface and a resistance due to time-dependent changes of the superconducting phase. The latter is responsible for the actual mixing process in a nonuniform superconducting environment set up by the bias conditions and the geometry. The present understanding indicates that further improvement needs to be found in the use of other materials with a faster energy relaxation rate. Meanwhile, several empirical parameters have become physically meaningful indicators of the devices, which will facilitate the technological developments. |
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2156-342X |
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1292 |
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Author |
Semenov, A.; Haas, P.; Ilin, K.; Hubers, H.; Siegel, M.; Engel, A.; Smirnov, A. |
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Title |
Energy resolution and sensitivity of a superconducting quantum detector |
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Journal Article |
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Year |
2007 |
Publication |
Phys. C: Supercond. |
Abbreviated Journal |
Phys. C: Supercond. |
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460-462 |
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1491-1492 |
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0921-4534 |
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Sidorova, M.; Semenov, A.; Korneev, A.; Chulkova, G.; Korneeva, Y.; Mikhailov, M.; Devizenko, A.; Kozorezov, A.; Goltsman, G. |
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Title |
Electron-phonon relaxation time in ultrathin tungsten silicon film |
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Miscellaneous |
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2018 |
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arXiv |
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WSi film |
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Using amplitude-modulated absorption of sub-THz radiation (AMAR) method, we studied electron-phonon relaxation in thin disordered films of tungsten silicide. We found a response time ~ 800 ps at critical temperature Tc = 3.4 K, which scales as minus 3 in the temperature range from 1.8 to 3.4 K. We discuss mechanisms, which can result in a strong phonon bottle-neck effect in a few nanometers thick film and yield a substantial difference between the measured time, characterizing response at modulation frequency, and the inelastic electron-phonon relaxation time. We estimate the electron-phonon relaxation time to be in the range ~ 100-200 ps at 3.4 K. |
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Duplicated as 1341 |
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1340 |
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