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Корнеев АА, Окунев ОВ, Чулкова ГМ, Смирнов КВ, Милостная ИИ, Минаева ОВ, et al. Спонтанные и фотоиндуцированные резистивные состояния в узких сверхпроводящих NbN полосках. МПГУ; 2015.
Abstract: Монография посвящена актуальной проблеме современной фотоники: разработке высокочувствительных и быстродействующих сверхпроводниковых однофотонных детекторов на основе тонкой пленки NbN. В работе исследуются неравновесные процессы, протекающие в тонкой сверхпроводящей пленке после поглощения инфракрасного фотона и приводящие к возникновению резистивного состояния. На этих процессах основан механизм фотоотклика исследуемого в работе однофотонного детектора. В частности, исследуются зависимости квантовой эффективности и скорости темнового счета от геометрических параметров детектора: толщины пленки, ширины полоски, а также от величины транспортного тока детектора. Монография предназначена для студентов старших курсов, аспирантов и начинающих исследователей, работающих в области сверхпроводниковой наноэлектроники и радиофизики.
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Titova NA, Baeva EM, Kardakova AI, Goltsman GN. Fabrication of NbN/SiNx:H/SiO2 membrane structures for study of heat conduction at low temperatures. In: J. Phys.: Conf. Ser. Vol 1695.; 2020. 012190.
Abstract: Here we report on the development of NbN/SiNx:H/SiO2-membrane structures for investigation of the thermal transport at low temperatures. Thin NbN films are known to be in the regime of a strong electron-phonon coupling, and one can assume that the phononic and electronic baths in the NbN are in local equilibrium. In such case, the cooling of the NbN-based devices strongly depends on acoustic matching to the substrate and substrate thermal characteristics. For the insulating membrane much thicker than the NbN film, our preliminary results demonstrate that the membrane serves as an additional channel for the thermal relaxation of the NbN sample. That implies a negligible role of thermal boundary resistance of the NbN-SiNx:H interface in comparison with the internal thermal resistance of the insulating membrane.
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Korneev A, Minaeva O, Divochiy A, Antipov A, Kaurova N, Seleznev V, et al. Ultrafast and high quantum efficiency large-area superconducting single-photon detectors. In: Dusek M, Hillery MS, Schleich WP, Prochazka I, Migdall AL, Pauchard A, editors. Proc. SPIE. Vol 6583. Spie; 2007. 65830I (1 to 9).
Abstract: We present our latest generation of superconducting single-photon detectors (SSPDs) patterned from 4-nm-thick NbN films, as meander-shaped 0.5-mm-long and 100-nm-wide stripes. The SSPDs exhibit excellent performance parameters in the visible-to-near-infrared radiation wavelengths: quantum efficiency (QE) of our best devices approaches a saturation level of 30% even at 4.2 K (limited by the NbN film optical absorption) and dark counts as low as 2x10-4 Hz. The presented SSPDs were designed to maintain the QE of large-active-area devices, but, unless our earlier SSPDs, hampered by a significant kinetic inductance and a nanosecond response time, they are characterized by a low inductance and GHz counting rates. We have designed, simulated, and tested the structures consisting of several, connected in parallel, meander sections, each having a resistor connected in series. Such new, multi-element geometry led to a significant decrease of the device kinetic inductance without the decrease of its active area and QE. The presented improvement in the SSPD performance makes our detectors most attractive for high-speed quantum communications and quantum cryptography applications.
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Goltsman GN. Ultrafast nanowire superconducting single-photon detector with photon number resolving capability. In: Arakawa Y, Sasaki M, Sotobayashi H, editors. Proc. SPIE. Vol 7236. SPIE; 2009. 72360D (1 to 11).
Abstract: In this paper we present a review of the state-of-the-art superconducting single-photon detector (SSPD), its characterization and applications. We also present here the next step in the development of SSPD, i.e. photon-number resolving SSPD which simultaneously features GHz counting rate. We have demonstrated resolution up to 4 photons with quantum efficiency of 2.5% and 300 ps response pulse duration providing very short dead time.
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Il'in K, Siegel M, Semenov A, Engel A, Hübers H-W, Hollmann E, et al. Thickness dependence of superconducting properties of ultrathin Nb and NbN films. In: AKF-Frühjahrstagung.; 2004.
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