Cherednichenko S, Drakinskiy V, Baubert J, Krieg J-M, Voronov B, Gol'tsman G, et al. Gain bandwidth of NbN hot-electron bolometer terahertz mixers on 1.5 μm Si3N4 / SiO2 membranes. J Appl Phys. 2007;101(12):124508 (1 to 6).
Abstract: The gain bandwidth of NbN hot-electron bolometer terahertz mixers on electrically thin Si3N4/SiO2 membranes was experimentally investigated and compared with that of HEB mixers on bulk substrates. A gain bandwidth of 3.5 GHz is achieved on bulk silicon, whereas the gain bandwidth is reduced down to 0.6–0.9 GHz for mixers on 1.5 μm Si3N4/SiO2 membranes. We show that application of a MgO buffer layer on the membrane extends the gain bandwidth to 3 GHz. The experimental data were analyzed using the film-substrate acoustic mismatch approach.
|
Kawamura J, Blundell R, Tong C-YE, Papa DC, Hunter TR, Paine SN, et al. Superconductive hot-electron-bolometer mixer receiver for 800-GHz operation. IEEE Trans Microw Theory Techn. 2000;48(4):683–9.
Abstract: In this paper, we describe a superconductive hot-electron-bolometer mixer receiver designed to operate in the partially transmissive 350-μm atmospheric window. The receiver employs an NbN thin-film microbridge as the mixer element, in which the main cooling mechanism of the hot electrons is through electron-phonon interaction. At a local-oscillator frequency of 808 GHz, the measured double-sideband receiver noise temperature is TRX=970 K, across a 1-GHz intermediate-frequency bandwidth centered at 1.8 GHz. We have measured the linearity of the receiver and the amount of local-oscillator power incident on the mixer for optimal operation, which is PLO≈1 μW. This receiver was used in making observations as a facility instrument at the Heinrich Hertz Telescope, Mt. Graham, AZ, during the 1998-1999 winter observing season.
|
Ryabchun SA, Tretyakov IV, Pentin IV, Kaurova NS, Seleznev VA, Voronov BM, et al. Low-noise wide-band hot-electron bolometer mixer based on an NbN film. Radiophys. Quant. Electron.. 2009;52(8):576–82.
Abstract: We develop and study a hot-electron bolometer mixer made of a two-layer NbN–Au film in situ deposited on a silicon substrate. The double-sideband noise temperature of the mixer is 750 K at a frequency of 2.5 THz. The conversion efficiency measurements show that at the superconducting transition temperature, the intermediate-frequency bandwidth amounts to about 6.5 GHz for a mixer 0.112 μm long. These record-breaking characteristics are attributed to the improved contacts between a sensitive element and a helical antenna and are reached due to using the in situ deposition of NbN and Au layers at certain stages of the process.
|
Goltsman G, Korneev A, Divochiy A, Minaeva O, Tarkhov M, Kaurova N, et al. Ultrafast superconducting single-photon detector. J Modern Opt. 2009;56(15):1670–80.
Abstract: The state-of-the-art of the NbN nanowire superconducting single-photon detector technology (SSPD) is presented. The SSPDs exhibit excellent performance at 2 K temperature: 30% quantum efficiency from visible to infrared, negligible dark count rate, single-photon sensitivity up to 5.6 µm. The recent achievements in the development of GHz counting rate devices with photon-number resolving capability is presented.
|
Tret’yakov IV, Ryabchun SA, Kaurova NS, Larionov PA, Lobastova AA, Voronov BM, et al. Optimum absorbed heterodyne power for superconducting NbN hot-electron bolometer mixer. Tech Phys Lett. 2010;36(12):1103–5.
Abstract: Absorbed heterodyne power has been measured in a low-noise broadband hot-electron bolometer (HEB) mixer for the terahertz range, operating on the effect of electron heating in the resistive state of an ultrathin superconducting NbN film. It is established that the optimum absorbed heterodyne power for the HEB mixer operating at 2.5 THz is about 100 nW.
|
