|
Gershenzon EM, Gol'tsman GN, Mel'nikov AP. Binding energy of a carrier with a neutral impurity atom in germanium and in silicon. JETP Lett. 1971;14(5):185–6.
|
|
Gershenzon EM, Gol'tsman GN. Transitions of electrons between excited states of donors in germanium. JETP Lett. 1971;14(2):63–5.
|
|
Gershenzon EM, Gol'tsman GN, Emtsev VV, Mashovets TV, Ptitsyna NG, Ryvkin SM. Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium. JETP Lett. 1971;14(6):241.
|
|
Slysz W, Wegrzecki M, Papis E, Gol'tsman GN, Verevkin A, Sobolewski R. A method of optimization of the NbN superconducting single-photon detector. Vol 36.; 2004.
|
|
Slysz W, Wegrzecki M, Bar J, Grabiec P, Gol'tsman GN, Verevkin M, et al. NbN superconducting single-photon detectors coupled with a communication fiber. Vol 37.; 2004.
|
