Lindgren M, Trifonov V, Zorin M, Danerud M, Winkler D, Karasik BS, et al. Transient resistive photoresponse of YBa2Cu3O7−δ films using low power 0.8 and 10.6 μm laser radiation. Appl Phys Lett. 1994;64(22):3036–8.
Abstract: Thin YBa2Cu3O7−δ laser deposited films were patterned into devices consisting of ten parallel 1 μm wide strips. Nonequilibrium picosecond and bolometric photoresponses were studied by the use of 17 ps full width at half‐maximum laser pulses and amplitude modulated radiation from an AlGaAs laser up to 10 GHz and from a CO2 laser up to 1 GHz. The time and frequency domain measurements were in agreement. The fast response can be explained by electron heating. The use of low optical power and a sensitive measurement system excluded any nonlinear transient processes and kinetic inductance changes in the superconducting state. At 1 GHz modulation frequency, the responsivity was ∼1.2 V/W both for 0.8 and 10.6 μm wavelengths. The sensitivity of a fast and spectrally broadband infrared detector is discussed.
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Danerud M, Winkler D, Lindgren M, Zorin M, Trifonov V, Karasik B, et al. A fast infrared detector based on patterned YBCO thin film. Supercond Sci Technol. 1994;7(5):321–3.
Abstract: Detectors for infrared radiation ( lambda =0.85 mu m) were made of 50 nm thick YBa2Cu3O7- delta films on LaAlO3 and MgO or 60 nm thick films on NdGaO3. Parallel strips (1 mu m wide by 20 mu m long) were patterned in the films and formed the active device. These devices were designed to detect short infrared laser pulses by electron heating. The detectors were current biased into the resistive and the normal states. The response was studied in direct pulse measurements as well as by amplitude modulation of a laser. The pulse measurements showed a fast picosecond response followed by a slower decay related to phonon escape through the film-substrate interface and heat diffusion in the substrate. The frequency spectra up to 10 GHz showed two slopes with a knee corresponding to the phonon escape time.
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Voronov BM, Gershenzon EM, Gol'tsman GN, Gogidze IG, Gusev YP, Zorin MA, et al. Picosecond range detector base on superconducting niobium nitride film sensitive to radiation in spectral range from millimeter waves up to visible light. Sverkhprovodimost': Fizika, Khimiya, Tekhnika. 1992;5(5):955–60.
Abstract: Fast-operating picosecond detector of electromagnetical radiation is developed on the basis of fine superconducting film of niobium nitride with high sensitivity within spectral range from millimetric waves up to visible light. Detector sensitive element represents structure covering narrow parallel strips with micron sizes included in the rupture of microstrip line. Detecting ability of the detector and time constant measured using amplitude-simulated radiation of reverse wave tubes and pulse radiation of picosecond gas and solid-body lasers, constitute D*≅1010 W-1·cm·Hz-1/2 and τ≤5 ps respectively, at 10 K temperature. The expected value of time constant of the detector at 10 K obtained via extrapolation of directly measured dependence that is, τ ∝ τ-1, constitutes 20 ps. Experimental data demonstrate that detection mechanism is linked with electron heating effect.
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Gershenzon EM, Gol'tsman GN, Dzardanov AL, Elant'ev AI, Zorin MA, Markin AG, et al. S-N switching of niobium and YBCO films: limit time and perspective of fast key element creation. Sverkhprovodimost': Fizika, Khimiya, Tekhnika. 1992;5(12):2386–402.
Abstract: A study was made on processes of switching of thin niobium film strips between superconducting and normal states under the effect of optical radiation pulse and voltage step. The results are described satisfactorily by the model of spatial homogeneous electron heating. It is shown that limiting switching times can be equal to several shares of nanosecond at 4.2 K. Preliminary results for YBa2Cu3O-7-x films are presented. Prospects and advantages of creation of ducting structures of narrow streps, are discussed.
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Gershenzon EM, Gol’tsman GN, Dzardanov AL, Zorin MA. Ultrafast superconductive switch. IEEE Trans Magn. 1991;27(2):2844–6.
Abstract: The transition from superconductive to resistive state caused by infrared radiation and bias current pulses was investigated in order to minimize switching time tau and driving power W. Experimental results for Nb microstrips confirm the correctness of calculations based on the model of electron heating. For Nb switches, tau measured directly is 0.3-0.8 ns for radiation pulses and 1-3 ns for bias current pulses at T=4.2 K, while for YBaCuO switches at T=77 K it is expected to be several picoseconds. For an YBaCuO sample with the dimensions of 5*2*0.15 mu m/sup 2/, W was 10 mW, and it can be further reduced to the order of several microwatts by decreasing the volume of the sample.
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