Records |
Author |
Shurakov, A.; Seliverstov, S.; Kaurova, N.; Finkel, M.; Voronov, B.; Goltsman, G. |
Title |
Input bandwidth of hot electron bolometer with spiral antenna |
Type ![sorted by Type field, ascending order (up)](img/sort_asc.gif) |
Journal Article |
Year |
2012 |
Publication |
IEEE Trans. THz Sci. Technol. |
Abbreviated Journal |
IEEE Trans. THz Sci. Technol. |
Volume |
2 |
Issue |
4 |
Pages |
400-405 |
Keywords |
NbN HEB bolometers bandwidth, log-spiral antenna |
Abstract |
We report the results of our study of the input bandwidth of hot electron bolometers (HEB) embedded into the planar log-spiral antenna. The sensitive element is made of the ultrathin superconducting NbN film patterned as a bridge at the feed of the antenna. The contacts between the antenna and a sensitive element are made from in situ deposited gold (i.e., deposited over NbN film without breaking vacuum), which gives high quality contacts and makes the response of the HEB at higher frequencies less affected by the RF loss. An accurate experimental spectroscopic procedure is demonstrated that leads to the confirmation of the wide ( 8 THz) bandwidth in this antenna coupled device. |
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2156-342X |
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1161 |
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Author |
Fedorov, G.; Kardakova, A.; Gayduchenko, I.; Charayev, I.; Voronov, B.M.; Finkel, M.; Klapwijk, T.M.; Morozov, S.; Presniakov, M.; Bobrinetskiy, I.; Ibragimov, R.; Goltsman, G. |
Title |
Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-terahertz radiation |
Type ![sorted by Type field, ascending order (up)](img/sort_asc.gif) |
Journal Article |
Year |
2013 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
Volume |
103 |
Issue |
18 |
Pages |
181121 (1 to 5) |
Keywords |
carbon nanotubes, CNT, THz radiation, SiO2 substrate |
Abstract |
We report on the voltage response of carbon nanotube devices to sub-terahertz (THz) radiation. The devices contain carbon nanotubes (CNTs), which are over their length partially suspended and partially Van der Waals bonded to a SiO2 substrate, causing a difference in thermal contact. We observe a DC voltage upon exposure to 140 GHz radiation. Based on the observed gate voltage and power dependence, at different temperatures, we argue that the observed signal is both thermal and photovoltaic. The room temperature responsivity in the microwave to THz range exceeds that of CNT based devices reported before. Authors thank Professor P. Barbara for providing the catalyst for CNT growth and Dr. N. Chumakov and V. Rylkov for stimulating discussions. The work was supported by the RFBR (Grant No. 12-02-01291-a) and by the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007). G.F. acknowledges support of the RFBR grant 12-02-01005-a. |
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0003-6951 |
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1171 |
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Author |
Matyushkin, Y.; Kaurova, N.; Voronov, B.; Goltsman, G.; Fedorov, G. |
Title |
On chip carbon nanotube tunneling spectroscopy |
Type ![sorted by Type field, ascending order (up)](img/sort_asc.gif) |
Journal Article |
Year |
2020 |
Publication |
Fullerenes, Nanotubes and Carbon Nanostructures |
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Volume |
28 |
Issue |
1 |
Pages |
50-53 |
Keywords |
carbon nanotubes, CNT, scanning tunneling microscope, STM |
Abstract |
We report an experimental study of the band structure of individual carbon nanotubes (SCNTs) based on investigation of the tunneling density of states, i.e. tunneling spectroscopy. A common approach to this task is to use a scanning tunneling microscope (STM). However, this approach has a number of drawbacks, to overcome which, we propose another method – tunneling spectroscopy of SCNTs on a chip using a tunneling contact. This method is simpler, cheaper and technologically advanced than the STM. Fabrication of a tunnel contact can be easily integrated into any technological route, therefore, a tunnel contact can be used, for example, as an additional tool in characterizing any devices based on individual CNTs. In this paper we demonstrate a simple technological procedure that results in fabrication of good-quality tunneling contacts to carbon nanotubes. |
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Taylor & Francis |
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doi:10.1080/1536383X.2019.1671365 |
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1269 |
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Author |
Tretyakov, I. V.; Anfertyev, V. A.; Revin, L. S.; Kaurova, N. S.; Voronov, B. M.; Vaks, V. L.; Goltsman, G. N. |
Title |
Sensitivity and resolution of a heterodyne receiver based on the NbN HEB mixer with a quantum-cascade laser as a local oscillator |
Type ![sorted by Type field, ascending order (up)](img/sort_asc.gif) |
Journal Article |
Year |
2018 |
Publication |
Radiophys. Quant. Electron. |
Abbreviated Journal |
Radiophys. Quant. Electron. |
Volume |
60 |
Issue |
12 |
Pages |
988-992 |
Keywords |
NbN HEB mixer |
Abstract |
We present the results of experimental studies of the basic characteristics and operation features of a terahertz heterodyne detector based on the superconducting NbN HEB mixer and a quantum cascade laser as a local oscillator operating at a frequency of 2.02 THz. The measured noise temperature of such a mixer amounted to 1500 K. The spectral resolution of the detector is determined by the width of the local-oscillator spectral line whose measured value does not exceed 1 MHz. The quantum-cascade laser could be linearly tuned with respect to frequency with the coefficient 7.2 MHz/mA within the limits of the current oscillation bandwidth. |
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0033-8443 |
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Serial |
1307 |
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Author |
Fedorov, G.; Gayduchenko, I.; Titova, N.; Gazaliev, A.; Moskotin, M.; Kaurova, N.; Voronov, B.; Goltsman, G. |
Title |
Carbon nanotube based schottky diodes as uncooled terahertz radiation detectors |
Type ![sorted by Type field, ascending order (up)](img/sort_asc.gif) |
Journal Article |
Year |
2018 |
Publication |
Phys. Status Solidi B |
Abbreviated Journal |
Phys. Status Solidi B |
Volume |
255 |
Issue |
1 |
Pages |
1700227 (1 to 6) |
Keywords |
carbon nanotube schottky diodes, CNT |
Abstract |
Despite the intensive development of the terahertz technologies in the last decade, there is still a shortage of efficient room‐temperature radiation detectors. Carbon nanotubes (CNTs) are considered as a very promising material possessing many of the features peculiar for graphene (suppression of backscattering, high mobility, etc.) combined with a bandgap in the carrier spectrum. In this paper, we investigate the possibility to incorporate individual CNTs into devices that are similar to Schottky diodes. The latter is currently used to detect radiation with a frequency up to 50 GHz. We report results obtained with semiconducting (bandgap of about 0.5 eV) and quasi‐metallic (bandgap of few meV) single‐walled carbon nanotubes (SWNTs). Semiconducting CNTs show better performance up to 300 GHz with responsivity up to 100 V W−1, while quasi‐metallic CNTs are shown to operate up to 2.5 THz. |
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0370-1972 |
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Call Number |
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Serial |
1321 |
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