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Finkel MI, Maslennikov SN, Vachtomin YB, Svechnikov SI, Smirnov KV, Seleznev VA, et al. Hot electron bolometer mixer for 20 – 40 THz frequency range. In: Proc. 16th Int. Symp. Space Terahertz Technol. Göteborg, Sweden; 2005. p. 393–7.
Abstract: The developed HEB mixer was based on a 5 nm thick NbN film deposited on a GaAs substrate. The active area of the film was patterned as a 30×20 μm 2 strip and coupled with a 50 Ohm coplanar line deposited in situ. An extended hemispherical germanium lens was used to focus the LO radiation on the mixer. The responsivity of the mixer was measured in a direct detection mode in the 25÷64 THz frequency range. The noise performance of the mixer and the directivity of the receiver were investigated in a heterodyne mode. A 10.6 μm wavelength CW CO 2 laser was utilized as a local oscillator.
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Ryabchun SA, Tretyakov IV, Finkel MI, Maslennikov SN, Kaurova NS, Seleznev VA, et al. NbN phonon-cooled hot-electron bolometer mixer with additional diffusion cooling. In: Proc. 20th Int. Symp. Space Terahertz Technol. Charlottesville, USA; 2009. p. 151–4.
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Tretyakov IV, Ryabchun SA, Maslennikov SN, Finkel MI, Kaurova NS, Seleznev VA, et al. NbN HEB mixer: fabrication, noise temperature reduction and characterization. In: Proc. Basic problems of superconductivity. Moscow-Zvenigorod; 2008.
Abstract: We demonstrate that in the terahertz region superconducting hot-electron mixers offer the lowest noise temperature, opening the possibility of using HTS's in the future to fabricate these devices. Specifically, a noise temperature of 950 K was measured for the receiver operating at 2.5 THz with a NbN HEB mixer, and a gain bandwidth of 6 GHz was measured at 300 GHz near Tc for the same mixer.
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Seleznev VA, Divochiy AV, Vakhtomin YB, Morozov PV, Zolotov PI, Vasil'ev DD, et al. Superconducting detector of IR single-photons based on thin WSi films. In: J. Phys.: Conf. Ser. Vol 737.; 2016. 012032.
Abstract: We have developed the deposition technology of WSi thin films 4 to 9 nm thick with high temperature values of superconducting transition (Tc~4 K). Based on deposed films there were produced nanostructures with indicative planar sizes ~100 nm, and the research revealed that even on nanoscale the films possess of high critical temperature values of the superconducting transition (Tc~3.3-3.7 K) which certifies high quality and homogeneity of the films created. The first experiments on creating superconducting single-photon detectors showed that the detectors' SDE (system detection efficiency) with increasing bias current (I b) reaches a constant value of ~30% (for X=1.55 micron) defined by infrared radiation absorption by the superconducting structure. To enhance radiation absorption by the superconductor there were created detectors with cavity structures which demonstrated a practically constant value of quantum efficiency >65% for bias currents Ib>0.6-Ic. The minimal dark counts level (DC) made 1 s-1 limited with background noise. Hence WSi is the most promising material for creating single-photon detectors with record SDE/DC ratio and noise equivalent power (NEP).
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Zolotov PI, Divochiy AV, Vakhtomin YB, Morozov PV, Seleznev VA, Smirnov KV. Development of high-effective superconducting single-photon detectors aimed for mid-IR spectrum range. In: J. Phys.: Conf. Ser. Vol 917.; 2017. 062037.
Abstract: We report on development of superconducting single-photon detectors (SSPD) with high intrinsic quantum efficiency in the wavelength range 1.31 – 3.3 μm. By optimization of the NbN film thickness and its compound, we managed to improve detection efficiency of the detectors in the range up to 3.3 μm. Optimized devices showed intrinsic quantum efficiencies as high as 10% at mid-IR range.
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