|
|
Hajenius M, Yang ZQ, Gao JR, Baselmans JJA, Klapwijk TM, Voronov B, et al. Optimized sensitivity of NbN hot electron bolometer mixers by annealing. IEEE Trans Appl Supercond. 2007;17(2):399–402.
Abstract: We report that the heterodyne sensitivity of superconducting hot-electron bolometers (HEBs) increases by 25-30% after annealing at 85degC in high vacuum. The devices studied are twin-slot antenna coupled mixers with a small area NbN bridge of 1 mum times 0.15 mum, above which there is a SiO 2 passivation layer. The mixer noise temperature, gain, and resistance versus temperature curve of a HEB before and after annealing are compared and analysed. We show that the annealing reduces the intrinsic noise of the mixer by 37% and makes the superconducting transition of the bridge and the contacts sharper. We argue that the reduction ofthe noise is mainly due to the improvement of the transparency of the contact/film interface. The lowest receiver noise temperature of 700 K is measured at a local oscillator frequency of 1.63 THz and at a bath temperature of 4.2 K.
|
|
|
|
Kardakova AI, Coumou PCJJ, Finkel MI, Morozov DV, An PP, Goltsman GN, et al. Electron–phonon energy relaxation time in thin strongly disordered titanium nitride films. IEEE Trans Appl Supercond. 2015;25(3):1–4.
Abstract: We have measured the energy relaxation times from the electron bath to the phonon bath in strongly disordered TiN films grown by atomic layer deposition. The measured values of τ eph vary from 12 to 91 ns. Over a temperature range from 3.4 to 1.7 K, they follow T -3 temperature dependence, which are consistent with values of τ eph reported previously for sputtered TiN films. For the most disordered film, with an effective elastic mean free path of 0.35 nm, we find a faster relaxation and a stronger temperature dependence, which may be an additional indication of the influence of strong disorder on a superconductor.
|
|
|
|
Finkel M, Thierschmann H, Galatro L, Katan AJ, Thoen DJ, de Visser PJ, et al. Performance of THz components based on microstrip PECVD SiNx technology. IEEE Trans THz Sci Technol. 2017;7(6):765–71.
Abstract: We present a performance analysis of passive THz components based on Microstrip transmission lines with a 2-μmthin plasma-enhanced chemical vapor deposition grown silicon nitride (PECVD SiNX) dielectric layer. A set of thru-reflect-line calibration structures is used for basic transmission line characterizations. We obtain losses of 9 dB/mm at 300 GHz. Branchline hybrid couplers are realized that exhibit 2.5-dB insertion loss, 1-dB amplitude imbalance, and -26-dB isolation, in agreement with simulations. We use the measured center frequency to determine the dielectric constant of the PECVD SiN x , which yields 5.9. We estimate the wafer-to-wafer variations to be of the order of 1%. Directional couplers are presented which exhibit -12-dB transmission to the coupled port and -26 dB to the isolated port. For transmission lines with 5-μm-thin silicon nitride (SiN x ), we observe losses below 4 dB/mm. The thin SiN x dielectric membrane makes the THz components compatible with scanning probe microscopy cantilevers allowing the application of this technology in on-chip circuits of a THz near-field microscope.
|
|
|
|
Klapwijk TM, Semenov AV. Engineering physics of superconducting hot-electron bolometer mixers. IEEE Trans THz Sci Technol. 2017;7(6):627–48.
Abstract: Superconducting hot-electron bolometers are presently the best performing mixing devices for the frequency range beyond 1.2 THz, where good-quality superconductor-insulator-superconductor devices do not exist. Their physical appearance is very simple: an antenna consisting of a normal metal, sometimes a normal-metal-superconductor bilayer, connected to a thin film of a narrow short superconductor with a high resistivity in the normal state. The device is brought into an optimal operating regime by applying a dc current and a certain amount of local-oscillator power. Despite this technological simplicity, its operation has found to be controlled by many different aspects of superconductivity, all occurring simultaneously. A core ingredient is the understanding that there are two sources of resistance in a superconductor: a charge-conversion resistance occurring at a normal-metal-superconductor interface and a resistance due to time-dependent changes of the superconducting phase. The latter is responsible for the actual mixing process in a nonuniform superconducting environment set up by the bias conditions and the geometry. The present understanding indicates that further improvement needs to be found in the use of other materials with a faster energy relaxation rate. Meanwhile, several empirical parameters have become physically meaningful indicators of the devices, which will facilitate the technological developments.
|
|
|
|
Gao JR, Hajenius M, Yang ZQ, Baselmans JJA, Khosropanah P, Barends R, et al. Terahertz superconducting hot electron bolometer heterodyne receivers. IEEE Trans. Appl. Supercond.. 2007;17(2):252–8.
Abstract: We highlight the progress on NbN hot electron bolometer (HEB) mixers achieved through fruitful collaboration between SRON Netherlands Institute for Space Research and Delft University of Technology, the Netherlands. This includes the best receiver noise temperatures of 700 K at 1.63 THz using a twin-slot antenna mixer and 1050 K at 2.84 THz using a spiral antenna coupled HEB mixer. The mixers are based on thin NbN films on Si and fabricated with a new contact-process and-structure. By reducing their areas HEB mixers have shown an LO power requirement as low as 30 nW. Those small HEB mixers have demonstrated equivalent sensitivity as those with large areas provided the direct detection effect due to broadband radiation is removed. To manifest that a HEB based heterodyne receiver can in practice be used at arbitrary frequencies above 2 THz, we demonstrate a 2.8 THz receiver using a THz quantum cascade laser (QCL) as local oscillator.
|
|
